Related papers: Electronic spin transport in graphene field effect…
We investigate spin relaxation in graphene spin valves and observe strongly contrasting behavior for single layer graphene (SLG) and bilayer graphene (BLG). In SLG, the spin lifetime ({\tau}s) varies linearly with the momentum scattering…
The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local…
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to…
We show that the electric field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from…
We study the spin relaxation in graphene due to magnetic moments induced by defects. We propose and employ in our studies a microscopic model that describes magnetic impurity scattering processes mediated by charge puddles. This model…
The carbon isotope $^{13}$C, in contrast to $^{12}$C, possesses a nuclear magnetic moment and can induce electron spin dephasing in graphene. This effect is usually neglected due to the low abundance of $^{13}$C in natural carbon allotropes…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
We perform a comparative study of the spin relaxation by spin-orbit coupling induced from adatoms (hydrogen and fluorine) in graphene. Two methods are applied, giving consistent results: a full quantum transport simulation of a graphene…
Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…
Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while also being an…
Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged…
We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is…
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the…
Spin dependent electron transport measurements on graphene are of high importance to explore possible spintronic applications. Up to date all spin transport experiments on graphene were done in a semi-classical regime, disregarding quantum…
Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along…
Graphene is promising as a host material for electron spin qubits because of its predicted potential for long coherence times. In armchair graphene nanoribbons (aGNRs) a small bandgap is opened, allowing for electrically gated quantum dots,…
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD…
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of…