Related papers: Spin relaxation in $n$-type ZnO quantum wells
The contributions to the spin relaxation in copper (Cu) nanowires are quantified by carefully analyzing measurements of both charge and spin transport in lateral spin valves as a function of temperature and thickness. The temperature…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic…
Spin relaxation in undoped quasi-spherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order…
The nuclear-spin-relaxation rate 1/T_1 has been measured in a bilayer electron system at and around total Landau level filling factor nu =1. The measured 1/T_1, which probes electron spin fluctuations, is found to increase gradually from…
The temperature dependence of the electron spin relaxation time in MgB2 is anomalous as it does not follow the temperature dependence of the resistivity above 150 K, it has a maximum around 400 K, and it decreases for higher temperatures.…
We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…
The quasiparticle density of states in correlated and quantum-critical metals directly probes the effect of electronic correlations on the Fermi surface. Measurements of the nuclear spin-lattice relaxation rate provide one such experimental…
A comprehensive theoretical description is given for the spin relaxation and diffusion in solids. The formulation is made in a general statistical-mechanical way. The method of the nonequilibrium statistical operator (NSO) developed by D.…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
We have investigated spin relaxation times in CdTe quantum dots doped with a single Mn atom, a prototype of a system where the interaction between a single charge carrier and a single spin takes place. A theoretical model that was used…
We study the spin-relaxation time in materials where a large spin-orbit coupling (SOC) is present which breaks the spatial inversion symmetry. Such a spin-orbit coupling is realized in zincblende structures and heterostructures with a…
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electroluminescence circular polarization (Pc) ~19% is measured in…
The renormalization group formalism was applied to calculate the spin-lattice relaxation rate of a well-defined magnetic moment in the neighborhood of a spin degenerate Anderson impurity. In the Kondo regime, the spin-lattice relaxation…
We study the relaxation of a spin I that is weakly coupled to a quantum mechanical environment. Starting from the microscopic description, we derive a system of coupled relaxation equations within the adiabatic approximation. These are…
The electron spin-lattice relaxation (SLR) times T1 of Yb3+‡ ions were measured from the temperature dependence of electron spin resonance linewidth in Y0.99Yb0.01Ba2Cu3Ox with different oxygen contents. Raman relaxation processes…
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We find that the existence of the ferromagnetic transition is dependent upon the choice of well…
The temperature dependence of the site-dependent nuclear spin relaxation time T_1 around vortices is studied in s-wave and d-wave superconductors.Reflecting low energy electronic excitations associated with the vortex core, temperature…