Related papers: Unified Model for P-N Junction Current-Voltage Cha…
The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n junctions. They are usually employed for the calculation of the…
A model for the current-voltage characteristic of the junction between an Ion-Sensitive-Membrane and an electrolyte solution is derived and compared with numerical simulations of the Poisson-Nernst-Planck model for ion transport. The…
In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…
A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are…
We report first-principles calculations of the inelastic current-voltage (I-V) characteristics of a gold point contact and a molecular junction in the nonresonant regime. Discontinuities in the I-V curves appear in correspondence to the…
We develop a theory of current-voltage (I-U) characteristics for superconductor-normal metal-superconductor (SNS) junctions. At small voltages and sufficiently low temperatures the I-U characteristics of the junction is controlled by the…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
The analytical theory for the voltage-current characteristics of the large inductance (L>100 pH) high-T_c DC SQUIDs that has been developed previously is consistently compared with the computer simulations and the experiment. The…
Spectral approach to the charge carrier transport in $p-n$-junctions has allowed us to revise the theoretical results relating to large signal operation of the junction to make them valid for both the low and high frequencies ranges. The…
By use of the multi-Josephson junction model, we investigate voltage-biased I-V characteristics. Differently from the case of the single junction, I-V characteristics show a complicated behavior due to inter-layer couplings among…
The I-V characteristics of a Josephson junction shunted by an Ohmic resistor shows sharp peaks when levels in neighbouring wells are crossing. We consider the shape and size of these peaks using a double-well model where the wells are given…
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up…
In the present work, the current-voltage (I-V) characteristics in a coupled long Josephson junction based on magnesium diboride are studied by establishing a system of equations of phase differences of various inter- and intra-band channels…
It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we…
We study theoretically a junction consisting of a normal metal, PT-symmetric non-Hermitian superconductor, and an insulating thin layer between them (N-I-PTS junction). We calculate current-voltage characteristics for this junction using…
Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellain in nature, while metal electrons obey the Fermi-Dirac distribution. In this…
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends…
Voltage current characteristics of a PN-junction diode are intrinsically nonlinear in nature. It is shown in this paper that a mathematical form of nonlinearity of a PN-junction diode resembles the nonlinear response of electric…
Non-planar solar-cell devices have been promoted as a means to enhance current collection in absorber materials with charge-transport limitations. This work presents an analytical framework for assessing the ultimate performance of…
The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides,…