Related papers: Correlation radius in thin ferroelectric films
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm)…
Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…
We calculate the polarization of radiation from thick accretion disks with vertically averaged global magnetic field. The polarization arises as a result of the radiation scattering by free electrons in magnetized plasma of a disk. We…
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelectrics. Here, we investigated the role of the surface ions…
We consider ferroelectric phase transitions in both short-circuited and biased ferroelectric-semiconductor films with a space (depletion) charge which leads to some unusual behavior. It is shown that in the presence of the charge the…
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important…
The screening efficiency of a metal-ferroelectric interface plays a critical role in determining the polarization stability and hence the functional properties of ferroelectric thin films. Imperfect screening leads to strong depolarization…
We propose a model for predicting the fluctuations of electron states in thin films as function of film thickness. The model was derived based on the assumption of the existence of potential barrier fluctuations on the film surface. Since…
It was experimentally found that the evolution of dielectric loss with processing temperature displays a common trend in ferroelectric and dielectric thin oxide films: firstly an increase and then a decrease in dielectric loss when the…
Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show…
Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin…
Recently it has been shown that surface plasmons supported by an interface between a 3+1 dimensional topological insulator and a metal or between a 3+1 dimensional topological insulator with residual bulk charge carriers and vacuum have a…
The basic theory of the linear and nonlinear ac susceptibilities of type-II superconductors is outlined for various geometries, e.g. circular and elliptic disks, rings, and strips of thin films or of thicker platelets in a perpendicular…
A Ginzburg-Landau model is used to demonstrate how depletion layers give rise to thickness-dependent ferroelectric properties in thin films. It is shown that free charge layers at the film-electrode interface can result in an internal…
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…
We give detailed analysis of the effect of depolarizing field in nanometer-size ferroelectric capacitors studied by Kim et al. [Phys. Rev. Lett. 95, 237602 (2005)]. We calculate a critical thickness of the homogeneous state and its…
The ferroelectric polarization and short-circuit photocurrent in BaTiO3 thin films have been studied for different contact configurations that allow to measure the photoresponse and polarization under the presence of large or negligible…
In the supporting information file for article Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C 2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-ray…