Related papers: Information Processing with Pure Spin Currents in …
We show that an initially unpolarized electron flow acquires spin polarization after passing through a lateral barrier in two-dimensional (2D) system with spin-orbit interaction (SOI) even if the current is directed normally to the barrier.…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
Spontaneous spin polarization of the electrical current flowing through nonmagnetic semiconductor junctions can be generated by carrier scattering processes that are independent of the carrier spin. The two required elements for…
Pure spin current is a powerful tool for manipulating spintronic devices, and its dynamical behavior is an important issue. By using mesoscopic transport theory for electron tunneling induced by spin accumulation, we investigate the…
Unlike the two-terminal device, in which the time-reversal invariant spin-orbit interaction alone cannot polarize the spins, such a polarization can be generated when electrons from one source reservoir flow into two (or more) separate…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can…
Spin transport electronics - spintronics - focuses on utilizing electron spin as a state variable for quantum and classical information processing and storage. Some insulating materials, such as diamond, offer defect centers whose…
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long coherence times, frequencies near the telecom, and optical…
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it possesses following advantages: (1) The direction and the strength of the spin…
Quantum rings connected to ballistic circuits couple strongly to external magnetic fields if the connection is not symmetric. By analytical theory and computer simulation I show that properly connected rings can be used to pump currents in…
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the…
Silicene is a one-atom-thick 2D crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene,…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We propose two new approaches for regulating spin polarization and spin inversion in a conducting junction within a tight-binding framework based on wave-guide theory. The system comprises a magnetic quantum ring with finite modulation in…