Related papers: Dominant mobility modulation by the electric field…
The interfacial electronic properties of complex oxides are governed by a delicate balance between charge transfer, lattice distortions, and electronic correlations, posing a key challenge for controlled tunability in materials research.…
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the…
Recent transport experiments in spatially modulated quasi-1D structures created on top of LaAlO$_3$/SrTiO$_3$ interfaces have revealed some interesting features, including phenomena conspicuously absent without the modulation. In this work,…
The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…
We investigate the possibility of multi-band superconductivity in SrTiO$_{3}$ films and interfaces using a two-dimensional two-band model. In the undoped compound, one of the bands is occupied whereas the other is empty. As the chemical…
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and…
We present a theory of magnetic and magneto-transport phenomena at LaAlO$_3$/SrTiO$_3$ interfaces, which as a central ingredient includes coupling between the conduction bands and local magnetic moments originating from charge traps at the…
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…
Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the…
The two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface exhibits gate tunable superconductivity with a domelike shape of $T_{\rm{C}}$ as a function of electron concentration. Here, we propose that the experimentally…
We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi…
Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic…
The oxide interface between LaAlO3 and KTaO3(111) can host an electron gas that condenses into superconductivity at low temperatures. In this work, we demonstrate a local and non-volatile control of this electron gas using a biased…
The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam…
We investigate tunable superconducting transitions in (111)$\mathrm{LaAlO}_3/\mathrm{KTaO}_3$ field-effect devices. Large increases in conductivity, associated with superconducting fluctuations, are observed far above the transition…
Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials.…
The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical…
The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as…