Related papers: Field Localization and Enhancement of Phase Locked…
We theoretically predict and experimentally demonstrate inhibition of linear absorption for phase and group velocity mismatched second and third harmonic generation in strongly absorbing materials, GaAs in particular, at frequencies above…
We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of…
We study second harmonic generation in nonlinear, GaAs gratings. We find large enhancement of conversion efficiency when the pump field excites the guided mode resonances of the grating. Under these circumstances the spectrum near the pump…
We demonstrate second and third harmonic generation from a GaP substrate 500{\mu}m thick. The second harmonic field is tuned at the absorption resonance at 335nm, and the third harmonic signal is tuned at 223nm, in a range where the…
Second and third harmonic generation in the opaque region of a GaAs wafer is experimentally observed both in transmission and reflection. These harmonic components can propagate through an opaque material as long as the pump is tuned to a…
In this letter we experimentally demonstrate second harmonic conversion in the opaque region of a GaAs cavity with efficiencies of the order of 0.1% at 612nm, using 3ps pump pulses having peak intensities of order of 10MW/cm2. We show that…
We demonstrate the simultaneous generation of second and third harmonic signals from a telecom wavelength pump in a gallium phosphide (GaP) microdisk. Using analysis of the power scaling of both the second and third harmonic outputs and…
We investigate type I second harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element of III-V semiconductors, only frequency conversion…
We study second harmonic generation in a negative index material cavity. The transmission spectrum shows a gap between the electric and magnetic plasma frequencies, so that localized and anti-localized states are allowed at the band edges.…
The 4-bar crystal symmetry in materials such as GaAs can enable quasi-phasematching for efficient frequency conversion without poling, twinning or other engineered domain inversions. 4-bar symmetry means that a 90 degree rotation is…
We demonstrate second harmonic generation in photonic crystal cavities in (001) and (111)B oriented GaAs. The fundamental resonance is at 1800 nm, leading to second harmonic below the GaAs bandgap. Below-bandgap operation minimizes…
We have conducted a theoretical study of harmonic generation from a silver grating having slits filled with GaAs. By working in the enhanced transmission regime, and by exploiting phase-locking between the pump and its harmonics, we…
Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host…
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and…
We demonstrate second harmonic generation at telecommunications wavelengths in L3 photonic crystal cavities in (111)-oriented GaAs. The second harmonic power from photonic crystal cavities fabricated in (111)-oriented GaAs is significantly…
Quantum fluctuation and quantum entanglement of the pump field reflected from an optical cavity for type II second harmonic generation are theoretically analyzed. The correlation spectra between the quadratures of the reflected subharmonic…
We report first measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second harmonic generation (SHG). A pump beam was tuned to excite carriers in all layers of GaAs/GaSb and…
Nanoscale amplification of non-linear processes in solid-state devices opens novel applications in nano-electronics, nano-medicine or high energy conversion for example. Coupling few nano-joules laser energy at a nanometer scale for strong…
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the…
The emergence of strong-field nanoplasmonics brings extreme laser field-matter interaction into the realm of nanoscale science, unveiling exciting new physics. Highly nonlinear interaction is enabled by tightly confined electric fields in…