Related papers: Multiferroic oxides-based flash-memory and spin-fi…
A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked…
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…
By means of ab initio calculations the possibilities of switchable spin-polarized two-dimensional electron gas (2DEG) at the interface of antiferromagnetic and ferroelectric perovskites, i.e., LaMnO3/BaTiO3 superlattice, were investigated.…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
By performing accurate ab-initio density functional theory calculations, we study the role of $4f$ electrons in stabilizing the magnetic-field-induced ferroelectric state of DyFeO$_{3}$. We confirm that the ferroelectric polarization is…
The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel…
The effect of a spatially modulated magnetic field on the weak localization phenomenon in two-dimensional electron gas (2DEG) is studied. Both the dephasing time $\tau_H$ and magnetoresistance are shown to reveal a nontrivial behavior as…
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Understanding, creating, and manipulating spin polarization of two-dimensional electron gases at complex oxide interfaces presents an experimental challenge. For example, despite almost a decade long research effort, the microscopic origin…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Spin-driven multiferroics exhibit strong magnetoelectric coupling, with notable polarization changes under a magnetic field, but these effects are usually limited to high-Z magnetic insulators with low electronic polarization. In this work,…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…
We propose that the magnetoelectric effect in multiferroic insulators with coplanar antiferromagnetic spiral order, such as BiFeO$_{3}$, enables electrically controlled dissipationless magnonics. Applying an oscillating electric field in…
We address a systematic microscopic theory of spin-dependent electric polarization in 3d oxides starting with a generic three-site two-hole cluster. A perturbation scheme realistic for 3d oxides is applied which implies the quenching of…