Related papers: Thermal properties of AlN-based atom chips
Decrease in the size of integrated circuits (IC) and metal interconnects raise resistivity due the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the…
The "metallic" temperature variation of the electrical resistivity of chemical nano gold-silver coatings with a silver content of 6.6 % at. up to 13.1 % at. determined in the temperature range 4.2-300 K. Features of low-temperature…
Motivated by recent experiments [Science 355, 6330 (2017); Nat. Nanotechnol. 12, 430 (2017)], we present here an extensive theoretical analysis of the thermal conductance of atomic-size contacts made of three different metals, namely gold…
We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the…
We demonstrate significant cooling of electrons in a nanostructure below 10 mK by demagnetisation of thin-film copper on a silicon chip. Our approach overcomes the typical bottleneck of weak electron-phonon scattering by coupling the…
Fabrication of dielectrics at low temperature is required for temperature-sensitive detectors. For superconducting detectors, such as transition edge sensors and kinetic inductance detectors, AlMn is widely studied due to its variable…
We have measured the resistances (and resistivities) of Ag and Cu nanowires of diameters ranging from 15nm to 200nm in the temperature range 4.2K-300K with the specific aim to assess the applicability of the Bloch-Gr\"{u}neisen formula for…
Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state…
This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick…
Amorphous alumina is employed ubiquitously as a high-dielectric-constant material in electronics, and its thermal-transport properties are of key relevance for heat management in electronic chips and devices. Experiments show that the…
Thermal annealing is a widely used thin-film processing technique for modifying interfacial optical losses and electronic scattering in plasmonic materials. Here, we investigate how thermal annealing of gold thin films deposited on silicon…
Through its dependence on low symmetry crystal phases, ferroelectricity is inherently a property tied to the lower temperature ranges of the phase diagram for a given material. This paper presents conclusive evidence that in the case of…
The thermal properties of a suspended metallic single-wall carbon nanotube (SWNT) are extracted from its high-bias (I-V) electrical characteristics over the 300-800 K temperature range, achieved by Joule self-heating. The thermal…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
Continuous Nb wires, 7-15 nm in diameter, have been fabricated by sputter-coating single fluorinated carbon nanotubes. Transmission electron microscopy revealed that the wires are polycrystalline, having grain sizes of about 5 nm. The…
We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $\mu$m buried silicon oxide layer using reactive DC magnetron…
Recent years witnessed a rapid growth of interest of scientific and engineering communities to thermal properties of materials. Carbon allotropes and derivatives occupy a unique place in terms of their ability to conduct heat. The…
Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transition near 180K. Both p and n-type Ge exhibits ideal Schottky…
Thermal diode is a growing technology and important for active thermal flow control. Since the theoretical designing of thermal diode in 2004, various kinds of solid-state thermal diodes have been theoretically and experimentally…
Surfaces which do not exhibit surface melting below the melting point (nonmelting surfaces) have been recently observed to sustain a very large amount of overheating. We present a theory which identifies a maximum overheating temperature,…