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Collective excitations of coupled electron-phonon systems are calculated for both monolayer and bilayer graphene, taking into account the non-perturbative Coulomb coupling between electronic excitations in graphene and the substrate…
The lattice dynamics of Ba1-xKxFe2As2 (x = 0.00, 0.27) have been studied by inelastic X-ray scattering measurement at room temperature. K doping induces the softening and broadening of phonon modes in the energy range E = 10-15 meV.…
We develop a theoretical model for polarization-selective phonon pumping induced by magnon-phonon coupling in a ferromagnetic/non-magnetic acoustic bilayer structure, focusing on the effects arising from a misalignment between the magnetic…
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the…
Twisted bilayer graphene (TBG) has attracted great interest in the last decade due to the novel properties it exhibited. It was revealed that e-phonon interaction plays an important role in a variety of phenomena in this system, such as…
The finite momentum transfer ($\boldsymbol{q}$) longitudinal optical response $\sigma^L(\boldsymbol{q},\omega)$ of graphene has a peak at an energy $\omega=\hbar v_F q$. This corresponds directly to a quasiparticle peak in the spectral…
Electron-phonon interaction and phonon frequencies of doped polar semiconductors are sensitive to long-range Coulomb forces and can be strongly affected by screening effects of free carriers, the latter changing significantly when…
We report here the charge transport behavior in graphene nanojunctions in which graphene nanodots, with relatively long relaxation time, are interfaced with ferromagnetic electrodes. Subsequently we explore the effect of substitutional…
Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry…
We study the electron-phonon coupling in twisted bilayer graphene (TBG), which was recently experimentally observed to exhibit superconductivity around the magic twist angle $\theta\approx 1.05^\circ$. We show that phonon-mediated electron…
Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…
The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure…
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of…
We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma-point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced…
Graphene is an attractive electrode material to contact nanostructures down to the molecular scale since it can be gated electrostatically. Gating can be used to control the doping and the energy level alignment in the nanojunction, thereby…
We present a novel measurement approach which combines the electrical characterization of solution-gated field effect transistors based on epitaxial bilayer graphene on 4H-SiC (0001) with simultaneous Raman spectroscopy. By changing the…
Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we…
We calculate the inelastic scattering rates and the hot electron inelastic mean free paths for both monolayer and bilayer graphene on a polar substrate. We study the quasiparticle self-energy by taking into account both electron-electron…
Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…
Plasmon and coupled plasmon-phonon modes in graphene are investigated the-oretically within the diagrammatic self-consistent field theory. It shows that two plasmon modes and four coupled plasmon-phonon modes can be excited via intra-and…