Related papers: Single Spin Transport Spectroscopy - Current Block…
Electron transport through a one-dimensional ring connected with two external leads, in the presence of spin-orbit interaction (SOI) of strength \alpha and a perpendicular magnetic field is studied. Applying Griffith's boundary conditions…
We Have developed the concept of a new kind of single-electron transistor in which the transport of the electron through a quantum wire is controlled by charged quantum rings. Using a 2D harmonic potential as the transverse constraint, we…
Using simultaneous magnetic force microscopy (MFM) and transport measurements of a graphene spin valve, we correlate the non-local spin signal with the magnetization of the device electrodes. The imaged magnetization states corroborate the…
We propose the interaction of two electrons in a triple quantum dot as a minimal system to control long range superexchange transitions. These are probed by transport spectroscopy. Narrow resonances appear indicating the transfer of charge…
We study the influence of moderate exchange interactions of electrons on the behavior of the peaks in the conductance of single electron transistors. We numerically reproduce recently observed features of both the peak positions and the…
Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of…
We study the decoherence of a single electron spin in an isolated quantum dot induced by hyperfine interaction with nuclei for times smaller than the nuclear spin relaxation time. The decay is caused by the spatial variation of the electron…
We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local…
I construct a minimal formalism to describe transport of non separable correlations arising when a superconductor is in contact with several electrodes (being ferromagnetic or normal metal). Transport theory is expressed in terms of…
We predict that a single-level quantum dot without discernible splitting of its spin states develops a spin-precession resonance in charge transport when embedded into a spin valve. The resonance occurs in the generic situation of Coulomb…
We theoretically propose a novel spin-dependent electronic transport mechanism in which the spin-unpolarized electron beam is split into different directions depending on spins at an atomic domain boundary in non-magnetic material.…
Shrinking spintronic devices to the nanoscale ultimately requires localized control of individual atomic magnetic moments. At these length scales, the exchange interaction plays important roles, such as in the stabilization of…
We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport…
We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
We study a tight binding model including both on site disorder and coupling of the electrons to randomly oriented magnetic moments. The transport properties are calculated via the Kubo-Greenwood scheme, using the exact eigenstates of the…