Related papers: Fractional Quantum Hall Effects in Graphene and It…
We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of…
We investigate bilayer graphene systems with layer switching domain walls separating the two energetically equivalent Bernal stackings in the presence of an external magnetic field. To this end we calculate quantum transport and local…
Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible state to a compressible state by tuning the bandgap at a given electron density. Likewise, variation of the…
We numerically study the quantum Hall effect (QHE) in bilayer graphene based on tight-binding model in the presence of disorder. Two distinct QHE regimes are identified in the full energy band separated by a critical region with…
We report observations of collective gap excitations of the fractional quantum Hall (FQH) states at filling factors \nu=p/(2p+1) (p=integer), for 1/3 <= \nu <= 2/3, by inelastic light scattering. The collective gap energies at \nu= 1/3, 2/5…
The fractional quantum Hall effect is a well-known demonstration of strongly correlated topological phases in two dimensions. However, the extension of this phenomenon into a three-dimensional context has yet to be achieved. Recently, the…
Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…
The fractional quantum Hall (FQH) effect arises from strong electron correlations in a quantising magnetic field, and features exotic emergent phenomena such as electron fractionalisation. Using the diagrammatic Monte Carlo approach with…
Remarkable recent experiments on the moir\'e structure formed by pentalayer rhombohedral graphene aligned with a hexagonal Boron-Nitride substrate report the discovery of a zero field fractional quantum hall effect. These "(Fractional)…
We investigate the electronic spectra and quantum Hall effect in twisted bilayer graphenes with various rotation angles under magnetic fields, using a model rigorously including the interlayer interaction. We describe the spectral evolution…
Motivated by the observation of even denominator fractional quantum Hall effect in the $n=3$ Landau level of monolayer graphene [Y. Kim $\textit{et al.}$, Nature Physics $\textbf{15}$, 154 (2019)], we consider a Bardeen-Cooper-Schrieffer…
A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as…
An important development in the field of the fractional quantum Hall effect has been the proposal that the 5/2 state observed in the Landau level with orbital index $n = 1$ of two dimensional electrons in a GaAs quantum well originates from…
Fractionalization is a phenomenon in which strong interactions in a quantum system drive the emergence of excitations with quantum numbers that are absent in the building blocks. Outstanding examples are excitations with charge e/3 in the…
We analyze the quantum Hall effect in single layer graphene with bilayer stripe defects. Such defects are often encountered at steps in the substrate of graphene grown on silicon carbide. We show that AB or AA stacked bilayer stripes result…
We develop a Fermionic Chern-Simons (CS) theory for the fractional quantum Hall effect in monolayer graphene with SU(4) symmetry, arising from the spin and the valley degrees of freedom, which involves four distinct CS gauge fields. We…
We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how…
The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types…
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…