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Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of…
The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer,…
For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and…
The dielectric properties of MnFe$_2$O$_4$ and $\gamma$-Fe$_2$O$_3$ magnetic nanoparticles embedded in insulating matrices were investigated. The samples showed frequency dependent dielectric anomalies coincident with the magnetic blocking…
Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a…
The Schottky barrier heights (SBHs) of defect-free interfaces of ZnO, CdO, MgO and SrO with various metals and different terminations are investigated by density functional supercell calculations. The oxide bands are corrected for their…
Hybrid heterostructure based phototransistors are attractive owing to their high gain induced by photogating effect. However, the absence of an in-plane built-in electric field in the single channel layer transistor results in a relatively…
Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we…
An inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the…
We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work…
Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…
We revisit certain aspects of a problem concerning the influence of carrier scattering induced by magnetic impurities in metals on their superconducting properties. Superconductivity is assumed to be driven by strong electron-phonon…
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This…
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical…
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can…
An atomistic insight into potential barrier formation and band bending at the interface between a metal and an n-type semiconductor is achieved by ab initio simulations and model analysis of a prototype Schottky diode, i.e., niobium doped…
Due to large difference in effective masses of light and heavy holes it is usually supposed that the above-barrier current in Schottky barriers on p-type semiconductor is controlled only by the heavy holes. However, in real structures,…
We have studied the finite bias transport properties of a 2H-1T' MoS$_2$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at contacting the 2D channel in a field effect transistor. Our…
The observed performances of carbon nanotube field effect transistors are examined using first-principles quantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended…
We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies…