Related papers: Current-voltage characteristics of tunable ferroma…
We study theoretically extraction of spin-polarized electrons at nonmagnetic semiconductor/ferromagnet junctions. The outflow of majority spin electrons from the semiconductor into the ferromagnet leaves a cloud of minority spin electrons…
We study current fluctuations in an interacting three-terminal quantum dot with ferromagnetic leads. For appropriately polarized contacts, the transport through the dot is governed by a novel dynamical spin blockade, i.e., a spin-dependent…
We study a simple microscopic model for thin, ferromagnetic, metallic layers on semi-infinite bulk superconductor. We find that for certain values of the exchange spliting, on the ferromagnetic side, the ground states of such structures…
We study tunneling in ferromagnet/unconventional superconductor (F/S) junctions. We include the effects of spin polarization, interfacial resistance, and Fermi wavevector mismatch (FWM) between the F and S regions. Andreev reflection (AR)…
The dynamics of the magnetic order parameters of ferromagnet/normal-metal/ferromagnet spin valves and isolated ferromagnets may be very different. We investigate the role of the nonequilibrium spin-current exchange between the ferromagnets…
We provide evidence for the effects of spin polarized current on a nanofabricated antiferromagnet incorporated into a spin-valve structure. Signatures of current-induced effects include bipolar steps in differential resistance,…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable…
We study the spin-resolved transport properties of T-shaped double quantum dots coupled to ferromagnetic leads. Using the numerical renormalization group method, we calculate the linear conductance and the spin polarization of the current…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an…
We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…
We survey some recent accumulated body of works on hyperfine-mediated transport in a confined one-dimensional channel, realized typically by electrostatic gating. Our review begins with how the spin-polarized edge current can be used as a…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
Controlling spin current lies at the heart of spintronics and its applications. The sign of spin currents is monotonous in ferromagnets once the current direction is determined. Spin currents in antiferromagnets can possess opposite…
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet nanojunction. The macrospin approximation is generalized to antiferromagnets. Canted…
We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using…
Recently, Seebeck coefficients of ferromagnetic conductors are found to be spin-dependent. However straightforward method of accurately determining its spin polarization is still to be developed. Here, we have derived a linear dependence of…
Using the tight-binding approximation and the nonequilibrium Green's function approach, we investigate the coherent spin-dependent transport in planar magnetic junctions consisting of two ferromagnetic (FM) electrodes separated by a…