Related papers: Spin polarization control by electric stirring: pr…
A scheme of spin diode is proposed that uses a step-like quantum wire with Rashba spin-orbit interaction, connected to two leads with different width. It is shown that a very large vertical spin-polarized current can be generated when…
High degree of electron spin polarization is of crucial importance in operation of spintronic devices. We study the propagation of spin-polarized electrons through a boundary between two n-type semiconductor regions with different doping…
We evaluate the spin polarization (Edelstein or inverse spin galvanic effect) and the spin Hall current induced by an applied electric field by including the weak localization corrections for a two-dimensional electron gas. We show that the…
We construct a novel scattering theory to investigate magnetoelectrically induced spin polarizations. Local spin polarizations generated by electric currents passing through a spin-orbit coupled mesoscopic system are measured by an external…
We demonstrate theoretically that the spin polarization of current can be electrically amplified within nonmagnetic semiconductors by exploiting the fact the spin current, compared to the charge current, is weakly perturbed by electric…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
In the quantum anomalous Hall effect, chiral edge modes are expected to conduct spin polarized current without dissipation and thus hold great promise for future electronics and spintronics with low energy consumption. However, spin…
We present a method to create spin-polarized beams of ballistic electrons in a two-dimensional electron system in the presence of spin-orbit interaction. Scattering of a spin-unpolarized injected beam from a lithographic barrier leads to…
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…
We propose to use the lateral interface between two regions with different strengths of the spin-orbit interaction(s) to spin-polarize the electrons in gated two dimensional semiconductor heterostructures. For a beam with a non zero angle…
It is shown that external magnetic field or magnetization induces electric polarization of microscopic isolated magnetic/non-magnetic hybrid structures due to the spin-dependent electron redistribution and mutual capacity. The…
Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely…
We propose quantum devices having spin-orbit coupling (but no magnetic fields or magnetic materials) that, when attached to leads, yield a high degree of transmitted electron polarization. An example of such a simple device is treated…
Spin Hall effect in a nonlocal spin-injection device is theoretically studied. Using a nonlocal spin-injection technique, a pure spin current is created in a nonmagnetic metal (N). The spin current flowing in N is deflected by spin-orbit…
We propose a ``spin-guide'' source for generation of electric currents with a high degree of spin polarization, allowing long-distance transmission of the spin-polarization. In the spin-guide scheme proposed here, a non-magnetic conducting…
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the…
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which…
Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which…