Related papers: Magnetization switching driven by spin-transfer-to…
The quantum tunneling of the magnetization vector are studied theoretically in single-domain ferromagnetic nanoparticles placed in an external magnetic field at an arbitrarily directed angle in the $ZX$ plane. We consider the…
The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an…
Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular,…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…
Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…
A new way of magnetization switching employing both the spin-transfer torque and the torque by a magnetic field is proposed. The solution of the Landau-Lifshitz-Gilbert equation shows that the dynamics of the magnetization in the initial…
We present a simple model of composite particle tunnelling through a rectangular potential barrier in presence of magnetic field. The exact numerical solution of the problem is provided and the applicability to real physical situations is…
The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current…
We study non-equilibrium magneto-transport through a single electron transistor or an impurity. We find that due to spin-flip transitions, generated by the spin-orbit interaction, the spectral density of the tunneling current fluctuations…
We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
In a ferromagnet/heavy-metal bilayer device with strong spin Hall effect an in-plane current excites magnetic dynamics through spin torque. We analyze bilayers with perpendicular magnetization and calculate three-dimensional phase diagrams…
Interfacing a ferromagnet with a polarized ferroelectric gate generates a non-uniform, interfacial spin density coupled to the ferroelectric polarization allowing so for an electric field control of effective transversal field to…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced…
The dynamics of magnetization in the presence of spin-transfer torque was studied. We derived the equation for the motion of magnetization in the presence of a spin current by using the local equilibrium assumption in non-equilibrium…
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that…