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We investigated the interlayer coupling effect in homobilayer structures of MSi2X4 with M = Mo/W and X = N/P/As. Through the combination of first-principles calculations and analytical formulations, the equilibrium interlayer distance,…

Materials Science · Physics 2024-10-08 Qian Wang , Na Zhang , Hongyi Yu

Effective modulation of magnetic permeability plays a vital role in the development of high-performance inductors. Here, phase-field simulations of hard/soft ferrite composites (BaM/NiZn) clarify how exchange coupling and microstructure…

Materials Science · Physics 2025-11-26 Xinyu Xu , Wenqin Yue , Yueli Yu , Yongke Yan , Liwei D. Geng

We study the properties of heterostructures formed by two layers of diluted magnetic semiconductor separated by a nonmagnetic semiconductor layer. We find that there is a RKKY-type exchange coupling between the magnetic layers that oscilles…

Materials Science · Physics 2009-11-07 M. P. López-Sancho , M. C. Muñoz , L. Brey

Spin spirals form inside the magnetic layers of antiferromagnetic and noncollinearly-coupled magnetic multilayers in the presence of an external magnetic field. This spin structure can be modeled to extract the direct exchange stiffness of…

Mesoscale and Nanoscale Physics · Physics 2024-09-04 Elliot Wadge , Afan Terko , George Lertzman-Lepofsky , Paul Omelchenko , Bret Heinrich , Manuel Rojas , Erol Girt

Ferromagnetic side layers sandwiching a nonmagnetic spacer as a metallic trilayer has become a pivotal platform for achieving spintronic devices. Recent experiments demonstrate that manipulating the width or the nature of conducting spacer…

Materials Science · Physics 2024-09-09 Guan-Wei Peng , Hung-Chin Wang , Yu-Jie Zhong , Chao-Cheng Kaun , Ching-Hao Chang

Antiferromagnetic interlayer coupling in dilute magnetic semiconductor superlattices could result in the realisation of large magnetoresistance effects analogous to the giant magnetoresistance seen in metallic multilayer structures. In this…

Materials Science · Physics 2010-10-29 A. D. Giddings , T. Jungwirth , B. L. Gallagher

We present a micromagnetic approach to exchange bias (EB) in ferromagnetic (FM)/antiferromagnetic (AFM) thin film systems with a small number of irreversible interfacial magnetic moments. We express the exchange bias field $H_{EB}$ in terms…

Materials Science · Physics 2014-03-07 J. Dubowik , I. Gościańska

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 \AA), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 \AA). While…

We revisit the non-collinear exchange coupling across the trilayer magnetic junction mediated by the diluted-magnetic-semiconductor thin film. By numerical approaches, we investigate the spiral angle between the ferromagnetic layers…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Chia-Hui Lin , Hsiu-Hau Lin , Tzay-Ming Hong

We discuss a mesoscopic mechanism of exchange interaction in ferromagnet-normal metal-ferromagnet multilayers. We show that in the case when the metal's thickness is larger than the electron mean free path, the relative orientation of…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 A. Zyuzin , B. Spivak , I. Vagner , P. Wyder

We report on the exchange biasing of self-assembled ferromagnetic GeMn nanocolumns by GeMn-oxide caps. The x-ray absorption spectroscopy analysis of this surface oxide shows a multiplet fine structure that is typical of the Mn2+ valence…

When the thickness of metal film approaches the nanoscale, itinerant carriers resonate between its boundaries and form quantum well states (QWSs), which are crucial to account for the film electrical, transport and magnetic properties.…

Materials Science · Physics 2015-10-28 Ching-Hao Chang , Kun-Peng Dou , Ying-Chin Chen , Tzay-Ming Hong , Chao-Cheng Kaun

By means of micromagnetic spin dynamics calculations, a quantitative calculation is carried out to explore the mechanism of exchange bias (EB) in ferromagnetic (FM)/compensated antiferromagnetic (AFM) bilayers. The antiferromagnets with low…

Materials Science · Physics 2009-11-07 D. S. Deng , X. F. Jin , Ruibao Tao

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect,…

Ferri-/ferromagnetic exchange coupled composites are promising candidates for bit patterned media because of the ability to control the magnetic properties of the ferrimagnet by its composition. A micromagnetic model for the bilayer system…

Some of the main experimental observations related to the occurrence of exchange bias in magnetic systems are reviewed, focusing the attention on the peculiar phenomenology associated to nanoparticles with core/shell structure as compared…

Materials Science · Physics 2008-06-20 Oscar Iglesias , Amilcar Labarta , Xavier Batlle

Van der Waals heterostructures are a core tool in quantum material design. The recent addition of monolayer ferroelectrics expands the possibilities of designer materials. Ferroelectric domains can be manipulated using electric fields, thus…

We study how a bias voltage changes magnetic exchange interactions. We derive a general expression for magnetic exchange interactions for systems coupled to reservoirs under a bias potential, and apply it to spin valves. We find that for…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Paul M. Haney , Christian Heiliger , Mark D. Stiles

The weak interlayer coupling in van der Waals (vdW) magnets has confined their application to two dimensional (2D) spintronic devices. Here, we demonstrate that the interlayer coupling in a vdW magnet Fe$_3$GeTe$_2$ (FGT) can be largely…

We investigate the effect of an inhomogeneous exchange field on the proximity effect in superconductor-ferromagnet hybrid structures within the quasi-classical theory of superconductivity. As an example we study the proximity effect in a…

Superconductivity · Physics 2007-05-23 T. Champel , M. Eschrig