Related papers: Analysis of Strain Fields in Silicon Nanocrystals
Strain engineering enables the direct modification of the atomic bonding and is currently an active area of research aimed at improving the electrocatalytic activity. However, directly measuring the lattice strain of individual catalyst…
Low-frequency Raman scattering spectra are presented for gold nanocrystals with diameters 3.5 and 13 nm. The frequencies of the Raman peaks but also their number are shown to vary with the nanocrystal size. These results are analyzed using…
The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- continuum elasticity (CE, treated as a finite difference…
Nanocrystalline materials are defined by their fine grain size, but details of the grain boundary character distribution should also be important. Grain boundary character distributions are reported for ball milled, sputter deposited, and…
Strain and defects in crystalline materials are responsible for the distinct mechanical, electric and magnetic properties of a desired material, making their study an essential task in material characterization, fabrication and design.…
For nanostructured materials, strain is of fundamental importance in stabilizing a specific crystallographic phase, modifying electronic properties, and in consequence their magnetism when it applies. Here we describe a magnetic shape…
The equation for the size strain plot methods reported by A. Khorsand Zak et al. (Solid State Sci. 13 (2011), 251) does not follow the dimensional homogeneity, consequently leading to an inaccurate estimation of the crystallite size and…
The role of local fields in the optical response of silicon nanocrystals is analyzed using a tight binding approach. Our calculations show that, at variance with bulk silicon, local field effects dramatically modify the silicon nanocrystal…
We investigate spin and optical properties of individual nitrogen-vacancy centers located within 1-10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic resonance spectrum down to lowest…
Nanoindentation is a widely used method for sensitive exploration of the mechanical properties of micromechanical systems. We derived an empirical analysis technique to extract stress-strain field gradient and divergence representations…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain,…
In this paper we review the theory of silicon nanowires. We focus on nanowires with diameters below 10 nm, where quantum effects become important and the properties diverge significantly from those of bulk silicon. These wires can be…
Stress or strain analysis for each atom around structural defects in a crystal is difficult. We propose a new analytical approach based on the eminent Embedding Atom Method(EAM) potential. We observe that the ratio $R$ between the repulsive…
One dimensional nano-beam photonic crystal cavities fabricated in silicon dioxide are considered in both simulation and experiment. Quality factors of over 10^4 are found via simulation, while quality factors of over 5*10^3 are found in…
The concept of a local linear elastic strain field is commonly used in the metallurgical research community to approximate the collective effect of atomic displacements around crystalline defects. Here we show that the elastic strain field…
A new two-dimensional material, the C$_2$N holey 2D (C$_2$N-$h$2D) crystal, has recently been synthesized. Here we investigate the strain effects on the properties of this new material by first-principles calculations. We show that the…
Crystal strain variation imposes significant limitations on many quantum sensing and information applications for solid-state defect qubits in diamond. Thus, precision measurement and control of diamond crystal strain is a key challenge.…
Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…
Surface strain often controls properties of the material including charge transport and chemical reactivity. Localized surface strain is measured with atomic resolution on (111) ceria nanoparticle surfaces using environmental transmission…