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We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…

Materials Science · Physics 2009-11-10 K. P. Pernstich , A. N. Rashid , S. Haas , G. Schitter , D. Oberhoff , C. Goldmann , D. J. Gundlach , B. Batlogg

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

Other Condensed Matter · Physics 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

Interfaces formed by two different organic semiconductors often exhibit a large conductivity, originating from transfer of charge between the constituent materials. The precise mechanisms driving charge transfer and determining its…

Materials Science · Physics 2016-03-01 Yulia Krupskaya , Ignacio Gutiérrez Lezama , Alberto F. Morpurgo

Crystalline organic semiconductors, bonded by weak van der Waals forces, exhibit macroscopic properties that are very similar to those of inorganic semiconductors. While there are many open questions concerning the microscopic nature of…

Materials Science · Physics 2016-02-22 Balthasar Blülle , Roger Häusermann , Bertram Batlogg

We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport…

Materials Science · Physics 2024-08-21 Michel Panhans , Frank Ortmann

We report a systematic study of the bias-dependent contact resistance in rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt electrodes. We show that the reproducibility in the values of contact resistance strongly…

Materials Science · Physics 2009-11-13 A. Molinari , I. Gutierrez , I. N. Hulea , S. Russo , A. F. Morpurgo

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved…

Materials Science · Physics 2009-11-10 A. F. Stassen , R. W. I. de Boer , N. N. Iosad , A. F. Morpurgo

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 V. Ryzhii , M. Ryzhii , A. Satou , T. Otsuji

The transport properties at finite temperature of crystalline organic semiconductors are investigated, within the Su-Schrieffer-Heeger model, by combining exact diagonalization technique, Monte Carlo approaches, and maximum entropy method.…

Materials Science · Physics 2015-02-26 G. De Filippis , V. Cataudella , A. S. Mishchenko , N. Nagaosa , A. Fierro , A. de Candia

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

Materials Science · Physics 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

Charge transport in Rubrene single crystals under uniaxial mechanical strain is systematically investigated in the crystal's two in-plane transport directions both under tensile and compressive strain applied parallel or perpendicular to…

Materials Science · Physics 2016-06-29 Tobias Morf , Thomas Mathis , Bertram Batlogg

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs…

Strongly Correlated Electrons · Physics 2009-11-07 V. Podzorov , V. M. Pudalov , M. E. Gershenson

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

Materials Science · Physics 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of…

Mesoscale and Nanoscale Physics · Physics 2022-01-03 G. I. Zebrev , D. S. Malich

In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D…

Organic semiconductors offer an unprecedented flexibility to control the electronic state of interfacial electronic systems. Here we present a first step in realizing organic charge transfer interfaces that combine both a large electrical…

Materials Science · Physics 2016-03-01 Yulia Krupskaya , Florian Rückerl , Martin Knupfer , Alberto F. Morpurgo

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase…

Strongly Correlated Electrons · Physics 2009-11-13 S. Fratini , H. Xie , I. N. Hulea , S. Ciuchi , A. F. Morpurgo

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…

Materials Science · Physics 2013-02-15 Ignacio Gutiérrez Lezama , Alberto F. Morpurgo

With the downscaling of MOSFETs to nanometer dimensions, transistor electrical parameter variability is produced by factors other than variations of physical dimensions and doping profiles, which are there since device fabrication and…

Applied Physics · Physics 2020-01-13 Gilson Wirth
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