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Related papers: Electrical Spin Injection into Silicon using MgO T…

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Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel…

We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials…

Mesoscale and Nanoscale Physics · Physics 2012-02-29 Juzar Thingna , Jian-Sheng Wang

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 F. J. Jedema , M. S. Nijboer , A. T. Filip , B. J. van Wees

We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel…

We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present…

Materials Science · Physics 2013-06-26 N. Nishizawa , H. Munekata

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…

We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$…

We developed a parametrization of transmission probability that reliably captures essential elements of the tunneling process in magnetic tunnel junctions. The electronic structure of Fe/MgO system is calculated within the quasiparticle…

Materials Science · Physics 2012-01-31 Sergey V. Faleev , Oleg N. Mryasov , Mark van Schilfgaarde

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…

Materials Science · Physics 2014-11-05 Qingyun Wu , Lei Shen , Zhaoqiang Bai , Minggang Zeng , Ming Yang , Zhigao Huang , Yuan Ping Feng

Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient…

Mesoscale and Nanoscale Physics · Physics 2014-10-06 Oihana Txoperena , Yang Song , Lan Qing , Marco Gobbi , Luis E. Hueso , Hanan Dery , Fèlix Casanova

We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which…

We demonstrate spin injection into a graphene thin film with high reliability by using non-local magnetoresistance (MR) measurements, in which the electric current path is completely separated from the spin current path. Using these…

Materials Science · Physics 2009-11-13 Megumi Ohishi , Masashi Shiraishi , Ryo Nouchi , Takayuki Nozaki , Teruya Shinjo , Yoshishige Suzuki

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for…

The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…

Materials Science · Physics 2007-08-16 K. D. Belashchenko , J. Velev , E. Y. Tsymbal

The magnitude of spin accumulation created in semiconductors by electrical injection of spin-polarized electrons from a ferromagnetic tunnel contact is investigated, focusing on how the spin signal detected in a Hanle measurement varies…

Mesoscale and Nanoscale Physics · Physics 2012-11-20 S. Sharma , A. Spiesser , S. P. Dash , S. Iba , S. Watanabe , B. J. van Wees , H. Saito , S. Yuasa , R. Jansen

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…

We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin transport through the suspended Cu channel is observed, and its…

We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the…

Materials Science · Physics 2007-05-23 T. Kimura , Y. Otani , J. Hamrle

We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 F. J. Jedema , M. S. Nijboer , A. T. Filip , B. J. van Wees