Related papers: Quantum charge transport in Mo$_{6}$S$_{3}$I$_{6}$…
We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…
Coherent electron transport through a quantum channel in the presence of a general extended scattering potential is investigated using a T-matrix Lippmann-Schwinger approach. The formalism is applied to a quantum wire with Gaussian type…
We study correlated quantum wires subject to harmonic modulation of the onsite-potential concentrating on the limit of large times, where the response of the system has synchronized with the drive. We identify the ratio…
We identify the leading processes of electron transport across finite-length segments of proximitized nanowires and build a quantitative theory of their two-terminal conductance. In the presence of spin-orbit interaction, a nanowire can be…
Nanowires have been considered for a number of applications in nanometrology. In such a context, we have explored the possibility of using ultrathin twisted nanowires as torsion nanobalances to probe forces and torques at molecular level…
We demonstrate that in a wide range of temperatures Coulomb drag between two weakly coupled quantum wires is dominated by processes with a small interwire momentum transfer. Such processes, not accounted for in the conventional Luttinger…
Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature…
We report electrical conductivity measurements of Polymethyl-methacrylate filled by onion-like carbon particles with primary particle size of $\approx 5$ nm. We shown that the conductivity $\sigma$ is exceptionally high even at very low…
We investigate the electronic transport properties of semiconducting ($m$,$n$) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport…
The theoretical model of the short-range interacting Luttinger liquid predicts a power-law scaling of the density of states and the momentum distribution function around the Fermi surface, which can be readily tested through tunneling…
As a result of suppressed phonon conduction, large improvements of the thermoelectric figure of merit, ZT, have been recently reported for nanostructures compared to the raw materials' ZT values. It has also been suggested that low…
We study tunneling between two nearby cleaved edge quantum wires in a perpendicular magnetic field. Due to Coulomb forces between electrons, the wires form a strongly-interacting pair of Luttinger liquids. We calculate the low-temperature…
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band…
Electronic transport properties through some model quantum systems are re-visited. A simple tight-binding framework is given to describe the systems where all numerical calculations are made using the Green's function formalism. First, we…
We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K…
The dependence of the transport properties on the specific location of the Fermi level in molecular electronics devices is studied by using electrodes of different materials. The zero-bias transport properties are shown to depend…
We investigate the distribution of the electron density and the potential in a quantum wire coupled to reservoirs, treating this structure as a unified quantum system and taking into account the Coulomb interaction of electrons. The…
With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical…
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport…
We investigate discrepancies between recent experimental results on transport through one-dimensional quantum dots and universal power laws predicted by an idealized Luttinger Liquid description. The temperature dependence of Coulomb…