Related papers: Integrated complementary graphene inverter
Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in…
In this paper we report phase modulation obtained by inducing a capacitive charge on graphene layers embedded in the core of a waveguide. There is a biasing regime in which graphene absorption is negligible but large index variations can be…
For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping,…
Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using…
The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-layer MoS2 n-MOSFET and a black phosphorus (BP) p-MOSFET…
We report a double-layer electronic system made of two closely-spaced but electrically isolated graphene monolayers sandwiched in boron nitride. For large carrier densities in one of the layers, the adjacent layer no longer exhibits a…
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…
The effective theory for bilayer graphene (BLG), subject to parallel/in-plane magnetic fields, is derived. With a sizable magnetic field the trigonal warping becomes irrelevant, and one ends up with two Dirac points in the vicinity of each…
In this article, we propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene…
Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band…
Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…
For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…
We report on the electrical properties of current annealed graphene and few layer graphene devices. It is observed that current annealing for several hours results the n-type doping in the graphene layers. After current annealing Dirac…
Electronic analogue of generalized Goos-H\"{a}nchen shifts is investigated in the monolayer graphene superlattice with one-dimensional periodic potentials of square barriers. It is found that the lateral shifts for the electron beam…
The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…
The present Letter proposes a device based on graphene for infrared light emission. It is based on a n- and p-doped monolayer graphene (MGs), with Fermi energies $E_F$ and -$E_F$, respectively, sandwiching a bilayer graphene (BG) with…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme…
It is shown that one can explore the optical conductivity of graphene, together with the ability of controlling its electronic density by an applied gate voltage, in order to achieve resonant coupling between an external electromagnetic…