Related papers: Terahertz Radiation Detection by Field Effect Tran…
We have developed a terahertz radiation detector that measures both the amplitude and polarization of the electric field as a function of time. The device is a three-contact photoconductive receiver designed so that two orthogonal…
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant…
We studied time resolution and response power dependence of three terahertz detectors based on significantly different types of field effect transistors. We analyzed the photoresponse of custom-made Si junctionless FETs, Si MOSFETs and…
When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular…
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast detector that is sensitive and able to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present…
Nonlinear resonances of plasma waves in field-effect transitors enable a well-known photodetection mechanism, first introduced by Dyakonov and Shur in the Nineties, especially suited to the Terahertz (THz) frequency range. Theoretical…
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range…
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For…
The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation…
We report on the new optical gating technique used for the direct photoconductive detection of short pulses of terahertz radiation with the resolution up to 250 femtoseconds. The femtosecond optical laser pulse time delayed with respect to…
High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as…
The magnetic-field dependence of optical reflectivity [$R(\omega)$] and optical conductivity [$\sigma(\omega)$] spectra of the ideal type-I Weyl semimetal TaAs has been investigated at the temperature of 10 K in the terahertz (THz) and…
We analyze the operation of a resonant detector of terahertz (THz) radiation based on a two-dimensional electron gas (2DEG) channel with split gates. The side gates are used for the excitation of plasma oscillations by incoming THz…
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite…
We analyze the terahertz detection characteristics of resonant tunneling diodes (RTDs) using a set of simple equations that covers three detection modes; (i) direct detection, (ii) amplified detection, and (iii) self-homodyne (coherent)…
We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling…
Terahertz (THz) radiation with its spectrum extending up to 1 THz has been observed by an illumination of femtosecond optical pulses to optical switching devices fabricated on magnetoresistive manganite thin films;…
Terahertz radiation from the mesa structures of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ is detected in samples with thin electrodes $< 100$ nm. In samples with thick electrodes $\simeq$ 400 nm, neither radiations nor voltage jumps in…
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson…
We propose a method for broadband long-wavelength photodetection using the nonlinear Hall effect in non-centrosymmetric quantum materials. The inherently quadratic relation between transverse current and input voltage at zero magnetic field…