Related papers: All-electric-spin control in interference single e…

Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…

A design for a quantum gate performing transformations of a single electron spin is presented. The spin rotations are performed by the electron going around the closed loops in a gated semiconductor device. We demonstrate the operation of…

We propose and theoretically investigate spin superconducting qubits. Spin superconducting qubit consists of a single spin confined in a Josephson junction. We show that owing to spin-orbit interaction, superconducting difference across the…

We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while…

Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based…

For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear background can be precisely controlled in generic quantum dots…

Using the recently reported mode locking effect we demonstrate a highly robust control of electron spin coherence in an ensemble of (In,Ga)As quantum dots during the single spin coherence time. The spin precession in a transverse magnetic…

It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…

We present a theoretical framework to describe experiments directed to controlling single-atom spin dynamics by electrical means using a scanning tunneling microscope. We propose a simple model consisting of a quantum impurity connected to…

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

Recent observations of destructive quantum interference in single-molecule junctions confirm the role played by quantum effects in the electronic conductance properties of molecular systems. We show here that the destructive interference…

A nanodevice capable of separating spins of two electrons confined in a quantum dot formed in a gated semiconductor nanowire is proposed. Two electrons confined initially in a single quantum dot in the singlet state are transformed into the…

We have studied theoretically the possibility of ultra-fast manipulation of a single electron spin in 2D semiconductor quantum dots, by means of high-frequency time-dependent electric fields. The electron spin degree of freedom is excited…

We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…

We apply the full power of modern electronic band structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single donor electron spin. Spin resonance transistors may form the technological…

Electrical control of spins at the nanoscale offers significant architectural advantages in spintronics, because electric fields can be confined over shorter length scales than magnetic fields. Thus, recent demonstrations of electric-field…

Controlling nanocircuits at the single electron spin level is a possible route for large-scale quantum information processing. In this context, individual electron spins have been identified as versatile quantum information carriers to…

Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch…

The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the…