Related papers: Four-terminal magneto-transport in graphene p-n ju…
Ideal Sharvin contact in a multimode regime shows the conductance $G\approx{}G_{\rm Sharvin}=g_0k_F{}W/\pi$ (with $g_0$ the conductance quantum, $k_F$ the Fermi momentum, and $W$ the contact width) accompanied by strongly suppressed…
Sulfur and nitrogen dual doped graphene have been extensively investigated in the field of oxygen reduction reaction, supercapacitors and batteries, but their magnetic and absorption performance have not been explored. Besides, the effects…
In this study, we employ a multi-scale computational modeling approach, combining density functional theory (DFT) and self-consistent charge density functional tight binding (SCC-DFTB), to investigate hydrogen (H2) production and…
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
We report that a perpendicular magnetic field introduces an anomalous interaction correction, $\delta \sigma$, to the static conductivity of doped graphene in the ballistic regime. The correction implies that the magnetoresistance, $\delta…
Density functional calculations are used to explain the charge transfer doping mechanism by which species physisorptively bonded to graphene can increase its free hole or electron density, without giving rise to defects, and thus maintain a…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
We report the first experimental study of graphene transferred on \b{eta}-Si3N4(0001)/Si(111). Our work provides a comprehensive quantitative understanding of the physics of ultrathin Si3N4 as a gate dielectric for graphene-based devices.…
To understand the interaction between nitrogen dopants and native point defects in graphene, we have studied the energetic stability of N-doped graphene with vacancies and Stone-Wales (SW) defect by performing the density functional theory…
Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect…
We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…
In this work, we present a systematic DFT investigation of the interaction between B-doped graphene and four selected metals: Mg and Zn, relevant for next-generation metal-ion batteries, and Cu and Pt, important for single-atom catalysis.…
We propose a unique way to control both bandgap and the magnetic properties of nanoscale graphene, which might prove highly beneficial for application in nanoelectronic and spintronic devices. We have shown that chemical doping by nitrogen…
We report on the existence of water-gated charge doping of graphene deposited on atomically flat mica substrates. Molecular films of water in units of ~0.4 nm-thick bilayers were found to be present in regions of the interface of…
Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode…
One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…
We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal…
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…
Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are…
The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n…