Related papers: Lower current-driven exchange switching threshold …
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both…
We present calculations of spin-dependent electron transport through single organic molecules bridging pairs of iron nanocontacts. We predict the magnetoresistance of these systems to switch from positive to negative with increasing applied…
We define the metamagnetic phase transition of itinerant electrons controlled by the spin injection mechanism. The current flow between a ferromagnetic metal and a metamagnetic metal produces the non-equilibrium shift of chemical potential…
We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion…
We investigate the switching of a magnetic nanoparticle comprising the middle free layer of a memory cell based on a double magnetic tunnel junction under the combined effect of spin-polarized current and weak on-chip magnetic field. We…
We formulate a low-energy theory for the magnetic interactions between electrons in the multi-band Hubbard model under non-equilibrium conditions determined by an external time-dependent electric field which simulates laser-induced spin…
The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
A periodic drive could alter the effective exchange interactions in magnetic materials. Here, we explore how exchange pathways affect the effective interactions of periodically driven magnetic materials. Aiming to apply Floquet engineering…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…
We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ($N$) was successfully tuned by…
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is…
The magnetization process of the $S$=1/2 antiferromagnetic spin ladder with the four-spin cyclic exchange interaction at T=0 is studied by the exact diagonalization of finite clusters and size scaling analyses. It is found that a…
The influence of insertion of an ultra-thin NiO layer between the MgO barrier and ferromagnetic electrode in magnetic tunnel junctions has been investigated by measuring the tunneling magnetoresistance and the X-ray magnetic circular…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of…
The domain state model for exchange bias has been further investigated by considering vector spins for the antiferromagnet instead of Ising spins used in the earlier studies. The qualitative results are similar to those with infinite…
The magnetic properties of a nanoscale system are inextricably linked to its local environment. In ad-atoms on surfaces and inorganic layered structures the exchange interactions result from the relative lattice positions, layer thicknesses…
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…