Related papers: Lower current-driven exchange switching threshold …
We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current…
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first…
The dynamics of the magnetization of the free layer in a spin-torque nano oscillator (STNO) influenced by a noncollinear alignment between the magnetizations of the free and pinned layers due to an interlayer exchange coupling has been…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…
Magnetization switching provoked by spin-injection is studied in Ni nanowires of various size and morphology. The response of the magnetization to the spin-injection is studied as a function of the amplitude of the current, the temperature,…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
We study the magnetic damping in the simplest of synthetic antiferromagnets, i.e. antiferromagnetically exchange-coupled spin valves in which applied magnetic fields tune the magnetic configuration to become noncollinear. We formulate the…
We propose the spin swapping effect for an exchange magnon spin current in a perpendicularly magnetized ferromagnetic medium with in plane anisotropy on the surface. The excitation of a magnon current flowing along an in-plane direction…
We show that when the magnetizations on opposite sides of a junction are not collinear, the magnetization current is not conserved as the junction is crossed. Thus the usual treatment of this problem needs to be modified. We argue that this…
We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the…
We investigate the role of exchange bridges in molecular magnets. We explore their effects on the distribution of the valence electrons and their contribution to the exchange processes. The present study is focused on a spin-half dimer with…
Current-induced excitations in bilayer magnetic nanopillars have been studied with large magnetic fields applied perpendicular to the layers at low temperature. Junctions investigated all have Cu/Co/Cu/Co/Cu as core layer stacks. Two types…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur…
Anisotropic single-molecule magnets may be thought of as molecular switches, with possible applications to molecular spintronics. In this paper, we consider current-induced switching in single-molecule junctions containing an anisotropic…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
The effect of undesirable high-frequency free-layer switching in magnetic multilayer systems, referred to as back hopping, is investigated by means of the spin-diffusion model. A possible origin of the back-hopping effect is found to be the…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…