Related papers: Defect scattering in graphene
Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…
It is shown that clustering of charged impurities on graphene can suppress their contribution to the resistivity by a large factor of about the number of impurities per cluster, while leaving the density dependence unchanged. If the cluster…
Band gap engineering in graphene may open the routes towards transistor devices in which electric current can be switched off and on at will. One may, however, ask if a semiconducting band gap alone is sufficient to quench the current in…
Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of…
We study how low-energy charge carriers scatter off periodic and linear graphene grain boundaries oriented along the zigzag direction with a periodicity three times greater than that of pristine graphene. These defects map the two Dirac…
Electron scattering problem in the monolayer graphene with short-range impurities is considered. The main novel element in the suggested model is the band asymmetry of the defect potential in the 2+1-dimensional Dirac equation. This…
Graphene is an attractive material for microelectronics applications, given such favourable electrical characteristics as high mobility, high operating frequency, and good stability. If graphene is to be implemented in electronic devices on…
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
Many of the proposed future applications of graphene require the controlled introduction of defects into its perfect lattice. Energetic ions provide one way of achieving this challenging goal. Single heavy ions with kinetic energies in the…
Charged impurity (CI) scattering is one of the dominant factors that affect the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity…
We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means…
We model disorder in graphene by random impurities treated in a coherent-potential approximation. Using the analytically solvable Lloyd model for the disorder distribution, we show that the temperature dependence of the minimum conductivity…
The derived by us earlier electron scattering matrix for the short-range defects in monolayer graphene is applyed to description of the resistivity electron density dependence. It is argued that large charged defect density is unlikely in…
Graphene grown by chemical vapor deposition and supported on SiO2 and sapphire substrates was studied following controlled introduction of defects induced by 35 keV carbon ion irradiation. Changes in Raman spectra following fluences ranging…
We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a…
We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is…
Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of…
We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…
We have carried out scanning tunneling spectroscopy measurements on exfoliated monolayer graphene on SiO$_2$ to probe the correlation between its electronic and structural properties. Maps of the local density of states are characterized by…
We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…