Related papers: Possible Fractional Quantum Hall Effect in Graphit…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
Bilayer graphene has been predicted to give unprecedented tunability of the electron-electron interaction with the help of external parameters, allowing one to stabilize different fractional quantum Hall states. Recent experimental works…
Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…
Scanning tunneling spectroscopy measurements were made on surfaces of two different kinds of graphite samples, Kish graphite and highly oriented pyrolytic graphite (HOPG), at very low temperatures and in high magnetic fields. We observed a…
We construct an effective Hamiltonian for electrons in the fractional quantum Hall regime for GaAs and graphene that takes into account Landau level mixing (for both GaAs and graphene) and subband mixing (for GaAs, due to the nonzero width…
We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…
Low-energy electronic states in monolayer and bilayer graphenes present chiral charge carriers with unique and unusual properties of interest for electronic applications. Here, we report the magnetotransport measurements in the ABC-stacked…
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced…
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K…
Hall effect measurements were performed under pressure and magnetic field up to 2.2 GPa and 16 T on a single crystal of UCoAl. At ambient pressure, the system undergoes a first order metamagnetic transition at the critical field B_m = 0.7 T…
Materials subjected to a magnetic field exhibit the Hall effect, a phenomenon studied and understood in fine detail. Here we report a qualitative breach of this classical behavior in electron systems with high viscosity. The viscous fluid…
We investigate the electronic spectra and quantum Hall effect in twisted bilayer graphenes with various rotation angles under magnetic fields, using a model rigorously including the interlayer interaction. We describe the spectral evolution…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines…
A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…
We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole…
Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall effect, in which correlations between electrons moving in two…
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…
We review the basic aspects of electrons in graphene (two-dimensional graphite) exposed to a strong perpendicular magnetic field. One of its most salient features is the relativistic quantum Hall effect the observation of which has been the…