Related papers: On a Second Critical Point in the First Order Meta…
We study the zero-temperature phase transition of a two-dimensional disordered boson Hubbard model. The phase diagram of this model is constructed in terms of the disorder strength and the chemical potential. Via quantum Monte Carlo…
To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…
We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…
Considering the long range Coulomb interactions between large polarons in dielectrics, we propose a model for their crystallization when no bipolarons are formed. As the density increases, the melting is examined at $T=OK$. One possibility…
We investigate the two-dimensional Hubbard model with next-nearest-neighbor hopping, t', using the dynamical cluster approximation. We confirm the existence of a first-order phase-separation transition terminating at a second-order critical…
We analyze here the fluctuation conductivity in the vicinity of the critical point in a 2D Josephson junction array shunted by an Ohmic resistor.We find that at the Gaussian level, the conductivity acquires a logarithmic dependence on…
Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which…
The conductance of disordered nano-wires at T=0 is calculated in one-particle approximation by reducing the original multi-dimensional problem for an open bounded system to a set of exactly one-dimensional non-Hermitian problems for mode…
By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…
Liquid electrolytes adsorbed at the surface of metallic electrodes display a multitude of structures that can largely differ from the parent bulk system, both in terms of composition and local organization. In particular, the existence of…
It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…
Critical opalescence is a characteristic experimental signature of a second order phase transition in solid state physics. A new, experimentally accessible measure of opacity and of attenuation length in heavy ion reactions is suggested, as…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…
In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…
The 4D compact U(1) gauge theory has a well-established phase transition between a confining and a Coulomb phase. In this paper, we revisit this model using state-of-the-art Monte Carlo simulations on anisotropic lattices. We map out the…
We report on DC and pulsed electric field sensitivity of the resistance of mixed valent Mn oxide based La(5/8-y)Pr(y)Ca(3/8)MnO(3) (y = 0.4) single crystals as a function of temperature. The low temperature regime of the resistivity is…
The character of the ground state of an antiferromagnetic insulator is fundamentally altered upon addition of even a small amount of charge. The added charges agglomerate along domain walls at which the spin correlations, which may or may…
High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $T\rightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of…