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Related papers: Realizing singlet-triplet qubits in multivalley Si…

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We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic…

Mesoscale and Nanoscale Physics · Physics 2016-01-28 M. R. Delbecq , T. Nakajima , P. Stano , T. Otsuka , S. Amaha , J. Yoneda , K. Takeda , G. Allison , A. Ludwig , A. D. Wieck , S. Tarucha

We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…

Mesoscale and Nanoscale Physics · Physics 2018-05-29 Viktoriia Kornich , Christoph Kloeffel , Daniel Loss

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

Mesoscale and Nanoscale Physics · Physics 2019-08-02 Xinyu Zhao , Xuedong Hu

The authors investigate the magnetic field dependence of the energy splitting between low-lying valley states for electrons in a Si/SiGe quantum well tilted with respect to the crystallographic axis. The presence of atomic steps at the…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Mark Friesen , M. A. Eriksson , S. N. Coppersmith

An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…

Mesoscale and Nanoscale Physics · Physics 2011-05-30 R. Rahman , J. Verduijn , N. Kharche , G. P. Lansbergen , G. Klimeck , L. C. L. Hollenberg , S. Rogge

Starting with an accurate pseudopotential description of the single-particle states, and following by configuration-interaction treatment of correlated electrons in vertically coupled, self-assembled InAs/GaAs quantum dot-molecules, we show…

Materials Science · Physics 2009-11-11 Lixin He , Gabriel Bester , Alex Zunger

Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required,…

Quantum computation strongly relies on the realisation, manipulation and control of qubits. A central method for realizing qubits is by creating a double-well potential system with a significant gap between the first two eigenvalues and the…

Quantum Physics · Physics 2016-09-01 Ariel Landau , Yakir Aharonov , Eliahu Cohen

This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Patrik Recher , Bjoern Trauzettel

A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…

Mesoscale and Nanoscale Physics · Physics 2024-10-04 Efe Cakar , H. Ekmel Ercan , Gordian Fuchs , Artem O. Denisov , Christopher R. Anderson , Mark F. Gyure , Jason R. Petta

The search of a sweet spot, locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot…

Mesoscale and Nanoscale Physics · Physics 2022-08-22 Guo Xuan Chan , Xin Wang

The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Guido Burkard , J. R. Petta

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of…

We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot,…

Quantum Physics · Physics 2007-05-23 Y. B. Lyanda-Geller , M. J. Yang , C. H. Yang

A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface…

Materials Science · Physics 2012-03-07 Zhengping Jiang , Neerav Kharche , Timothy Boykin , Gerhard Klimeck

Quasi-particle dynamics in interacting systems in the presence of disorder challenges the notion of internal thermalization, but proves difficult to investigate theoretically for large particle numbers. Engineered quantum systems may offer…

Spatial variations of the valley splitting in a quantum well present a key challenge for conveyor-mode shuttling of electron spins in Si/SiGe, giving rise to Landau-Zener-like excitations that cause leakage outside the qubit subspace. Here,…

Mesoscale and Nanoscale Physics · Physics 2026-05-14 Merritt P. R. Losert , S. N. Coppersmith , Mark Friesen

The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Kohei Sasaki , Ryuichi Masutomi , Kiyohiko Toyama , Kentarou Sawano , Yasuhiro Shiraki , Tohru Okamoto

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…