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Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical…
Inspired by recent experiments where electron transport was measured across graphene nanoribbons (GNR) suspended between a metal surface and the tip of a scanning tunneling microscope [Koch \textit{et al}., Nat. Nanotechnol. {\bf 7}, 713…
Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor)…
Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…
We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that the self-consistent solution of the three-dimensional (3D)…
The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…
Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…
We theoretically study the effect of transverse electric potentials on the transport properties of armchair graphene nanoribbons (AGNRs), formed by pairs of asymme-tric gates placed along the side of the ribbon. Single pair and dual pair…
On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approach provides unmatched control over electronic and structural…
Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction…
Materials and devices used in space and advanced energy systems are continuously exposed to high-energy photons and particles, leading to gradual changes in their structural and electronic properties. Gamma-ray exposure is particularly…
From the moment atomic precision control of the growth process of graphene was achieved, more elaborated carbon allotropes were proposed opening new channels for flat optoelectronics at the nanoscale. A special type of this material…
A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance…
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in…
Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect…
A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR…
The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important…
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…
Graphene nanoribbons (GNRs) are natural waveguides for electrons in graphene. Nevertheless, unlike micron-sized samples, conductance is nearly suppressed in these narrow graphene stripes, mainly due to scattering with edge disorder…
Graphene/carbon-nanotube (CNT) hybrid material can be useful in energy storage and nanoelectronic technologies. Here we address the CNT-oscillator encapsulated in a graphene-nanoribbon (GNR) trench as a novel design, and investigate its…