Related papers: The energy scale behind the metallic behaviors in …
We demonstrate that kinetic coefficients related to thermoelectric properties of the two dimensional electron gas in the diffusive regime are strongly influenced by electron-electron interaction. As an example we consider the thermoelectric…
We consider the finkelstein action describing a system of spin polarized or spinless electrons near two dimensions, in the presence of disorder as well as the Coulomb interactions.We extend the renormalization group analysis of our previous…
The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature…
Using first-principles calculations we model the out-of-plane switching of local dipoles in CuInP$_2$S$_6$ (CIPS) that are largely induced by Cu off-centering. Previously, a coherent switching of polarization via a quadruple-well potential…
Thermal transmission in a molecular transistor with fully spin-polarized electrodes subjected to a temperature gradient is considered. The problem has been solved by using density matrix method in perturbation approach over small tunneling…
The resistance R of the 2DEG on the vicinal Si surface shows an unusual behaviour, which is very different from that in the (100) Si MOSFET where an unconventional metal to insulator transition has been reported. The crossover from the…
Dynamic control of conductivity and optical properties via atomic structure changes is of tremendous technological importance in information storage. Energy consumption considerations provide a driving force toward employing thin materials…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
The electric polarization hysteresis loops and remanent polarization were revealed in multiferroics RMn$_2$O$_5$ with $R = Gd$ and $Bi$ at wide temperature interval from 5 K up to 330 K. Until recently, the long-range ferroelectric order…
High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low…
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {\alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
Voltage control effects provide an energy-efficient means of tailoring material properties, especially in highly integrated nanoscale devices. However, only insulating and semiconducting systems can be controlled so far. In metallic…
We develop a series of approximations to calculate free energy of a polar liquid. We show that long range nature of dipole interactions between the molecules leads to para-electric state instability at low temperatures and to a second-order…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
We consider scaling of the mean square dipole moments in a plasma with logarithmic interactions in a two- and three-dimensional system. In both cases, we establish the existence of a low-temperature regime where the mean square dipole…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We study the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity $\sigma$, we show that the value…