Related papers: Mapping donor electron wave function deformations …
We calculate the electronic wave-function for a phosphorus donor in silicon by numerical diagonalisation of the donor Hamiltonian in the basis of the pure crystal Bloch functions. The Hamiltonian is calculated at discrete points localised…
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling…
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these…
Modern nanotechnology allows producing, depending on application, various quantum nanostructures with the desired properties. These properties are strongly influenced by the confinement potential which can be modified, e.g., by electrical…
Carbon nanotubes provide a unique system to study one-dimensional quantization phenomena. Scanning tunneling microscopy is used to observe the electronic wave functions that correspond to quantized energy levels in short metallic carbon…
This paper presents a new method to obtain the deformation distribution on the main reflector of an antenna only by measuring the electric intensity on a spherical surface with the focal point as the center of the sphere, regardless of…
Recently it was reported that deeply subwavelength features of free space superoscillatory electromagnetic fields can be observed experimentally and used in optical metrology with nanoscale resolution [Science 364, 771 (2019)]. Here we…
The new scheme of the energy measurement of the extremely high energy electron beam with the inverse Compton scattering between electrons and microwave photons requires the precise calculation of the interaction cross section of electrons…
The electronic properties of pure and As-doped Si nanowires with radii up to 9.53 nm are studied using large scale density functional theory (DFT) calculations. We show that, for the undoped nanowires, the DFT bandgap reduces with…
The effects of a propagating sinusoidal out-of-plane flexural deformation in the electronic properties of a tense membrane of graphene are considered within a non-perturbative approach, leading to an electron-ripple coupling. The…
To quantify the effect of decoherence in quantum measurements, it is desirable to measure not merely the square modulus of the spatial wavefunction, but the entire density matrix, whose phases carry information about momentum and how pure…
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…
Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on…
A magnetic field, through its vector potential, usually causes measurable changes in the electron wave function only in the direction transverse to the field. Here we demonstrate experimentally and theoretically that in carbon nanotube…
We address potential deviations of radiation field from the bosonic behaviour and employ local quantum estimation theory to evaluate the ultimate bounds to precision in the estimation of these deviations using quantum-limited measurements…
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the…
We use the nuclear spin coherence of $^{31}$P donors in $^{28}$Si to determine flip-flop rates of donor electron spins. Isotopically purified $^{28}$Si crystals minimize the number of $^{29}$Si flip-flops, and measurements at 1.7 K suppress…
Transmission electron microscopy and spectroscopy currently enable the acquisition of spatially resolved spectral information from a specimen by focusing electron beams down to a sub-Angstrom spot and then analyzing the energy of the…
Understanding the profile of a qubit's wavefunction is key to its quantum applications. Unlike conducting systems, where a scanning tunneling microscope can be used to probe the electron distribution, there is no direct method for…