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Heat management is crucial in the design of nanoscale devices as the operating temperature determines their efficiency and lifetime. Past experimental and theoretical works exploring nanoscale heat transport in semiconductors addressed…

We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting to the…

Mesoscale and Nanoscale Physics · Physics 2023-02-23 Olivier Maillet , Dylan Cattiaux , Xin Zhou , Rasul R. Gazizulin , Olivier Bourgeois , Andrew D. Fefferman , Eddy Collin

Steady-state thermal transport in nanostructures with dimensions comparable to the phonon mean-free-path is examined. Both the case of contacts at different temperatures with no internal heat generation and contacts at the same temperature…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 Jan Kaiser , Tianli Feng , Jesse Maassen , Xufeng Wang , Xiulin Ruan , Mark Lundstrom

The capture of photoexcited hot electrons in semiconductors before they lose their excess energy to cooling is a long-standing goal in photon energy conversion. Semiconductor nanocrystals have large electron energy spacings that are…

We report the cooling of electrons in nanoelectronic Coulomb blockade thermometers below 4 mK. Above 7 mK the devices are in good thermal contact with the environment, well isolated from electrical noise, and not susceptible to…

Doppler and sideband cooling are long standing techniques that have been used together to prepare trapped atomic ions in their ground state of motion. In this paper we study how these techniques can be extended to cool both radial modes of…

Quantum Physics · Physics 2022-08-11 P. Hrmo , M. K. Joshi , V. Jarlaud , O. Corfield , R. C. Thompson

We compute the transient dynamics of phonons in contact with high energy "hot" charge carriers in 12 polar and non-polar semiconductors, using a first-principles Boltzmann transport framework. For most materials, we find that the decay in…

Mesoscale and Nanoscale Physics · Physics 2017-10-03 Sridhar Sadasivam , Maria K. Y. Chan , Pierre Darancet

Effects of ballistic transport on the temperature profiles and thermal resistance in nanowires are studied. Computer simulations of nanowires between a heat source and a heat sink have shown that in the middle of such wires the temperature…

Mesoscale and Nanoscale Physics · Physics 2024-07-01 R. Meyer , Graham W. Gibson , Alexander N. Robillard

The investigation of thermal properties of recently emerged two-dimensional (2D) materials is a necessary step towards fulfilling their potential applications in nano-electronics devices. In this study, the thermal conductivity of novel…

Materials Science · Physics 2019-06-26 Armin Taheri , Carlos Da Silva , Cristina H. Amon

Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole mechanism only below a characteristic, size-dependent…

Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the…

Thermal phonons are a major source of decoherence in quantum mechanical systems. Operating in the quantum ground state is therefore often an experimental prerequisite. Additionally to passive cooling in a cryogenic environment, active laser…

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the…

Materials Science · Physics 2013-08-14 Jin-Wu Jiang , Nuo Yang , Bing-Shen Wang , Timon Rabczuk

We have measured the heat conduction between 0.05 K and 1.0 K of high purity silicon wafers carrying on their polished faces a variety of thin dielectric films and polycrystalline thin metallic films. Using a Monte Carlo simulation to…

Materials Science · Physics 2009-10-31 P. D. Vu , Xiao Liu , R. O. Pohl

Although extensive experimental and theoretical works have been conducted to understand the ballistic and diffusive phonon transport in nanomaterials recently, direct observation of temperature and thermal nonequilibrium of different phonon…

Mesoscale and Nanoscale Physics · Physics 2017-05-17 Tianli Feng , Wenjun Yao , Zuyuan Wang , Jingjing Shi , Chuang Li , Bingyang Cao , Xiulin Ruan

We investigate the effect of electron-phonon coupling on low temperature phases in metallic single-wall carbon nanotubes. We obtain low-temperature phase diagrams of armchair and zigzag type nanotubes with screened interactions with a…

Strongly Correlated Electrons · Physics 2018-11-14 Junichi Okamoto , Ludwig Mathey , Wen-Min Huang

We study the nonequilibrium steady state of a mechanical resonator in the quantum regime realized by a suspended carbon nanotube quantum dot contacted by two ferromagnets. Because of the spin-orbit interaction and/or an external magnetic…

Mesoscale and Nanoscale Physics · Physics 2014-07-24 Pascal Stadler , Wolfgang Belzig , Gianluca Rastelli

Shot noise encodes additional information not directly inferable from simple electronic transport measurements. Previous measurements in atomic-scale metal junctions at cryogenic temperatures have shown suppression of the shot noise at…

Mesoscale and Nanoscale Physics · Physics 2010-03-09 P. J. Wheeler , J. N. Russom , K. Evans , N. S. King , D. Natelson

We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…

Superconductivity · Physics 2013-09-27 S. Chaudhuri , M. R. Nevala , I. J. Maasilta

Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon…

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