Related papers: Magnetotransport through graphene spin valves
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers…
Using the closed-time path integral approach, we nonperturbatively study inelastic tunneling of electrons via magnetic impurities in the barrier accompanied by phonon emission in a magnetic tunnel junction. The spectrum density of phonon…
The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We numerically study the disorder effect on the thermoelectric and thermal transport for bilayer graphene under a strong perpendicular magnetic field. In the unbiased case, we find that the thermoelectric transport has similar properties as…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
Dirac-electronic tunneling and nonlinear transport properties with both finite and zero energy bandgap are investigated for graphene with a tilted potential barrier under a bias. For validation, results from a finite-difference based…
We consider spin-polarized transport in a quantum spin Hall antidot system coupled to normal leads. Due to the helical nature of the conducting edge states, the screening potential at the dot region becomes spin dependent without external…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…
Magnetotransport underlines many important phenomena in condensed matter physics, such as the Hall effect and magnetoresistance (MR) effect. Thus far, most magnetotransport studies are based on bulk resistance measurements without direct…
Spin dependent transport in a three-terminal graphene nanoribbon (GNR) is investigated in presence of Rashba spin-orbit interaction. Such a three-terminal structure is shown to be highly effective in filtering electron spins from an…
We study the band structure and transport properties of ferromagnetic tetragonal silicene nanoribbons by using the non-equilibrium Green's function method. The band structure and spin-dependent conductance are discussed under the combined…
We study analytically and numerically the magnetotransport of strained graphene in a Corbino geometry gating in the presence of an external perpendicular magnetic field. The conductance of the Corbino disc of deformed graphene with a…
Motivated by the recent experiments of Amasha {\it et al.} [Phys. Rev. B {\bf 78}, 041306(R) (2008)], we investigate single electron tunneling into an empty quantum dot in presence of a magnetic field. We numerically calculate the tunneling…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with…