Related papers: Interacting antiferromagnetic and ferroelectric do…
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or multi layered graphene. Unexpectedly we have found that the…
Within the broad class of multiferroics (compounds showing a coexistence of magnetism and ferroelectricity), we focus on the subclass of "improper electronic ferroelectrics", i.e. correlated materials where electronic degrees of freedom…
Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…
Antiferromagnetically coupled multilayers with perpendicular anisotropy, as [CoPt]/Ru, Co/Ir, Fe/Au, display ferromagnetic stripe phases as the ground states. It is theoretically shown that the antiferromagnetic interlayer exchange causes a…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven…
An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…
Macroscopic properties of multiferroics, the systems that show simultaneously two types of ordering, could be controlled by the external fields of different nature. We analyze the behavior of multiferroics with antiferro-(AFM) and…
We theoretically study the antiferromagnetic domain wall motion actuated by an inhomogeneous external magnetic field. The Lagrangian and the equations of motion of antiferromagnetic spins under an inhomogeneous magnetic field are derived,…
Dynamics of the magnetization in ferromagnets is examined in the presence of transport electrons allowing the latter to interact. It is found that the existence of inhomogeneities such as domain wall (DW) structures, leads to changes that…
Interrelations of domain wall (extrinsic) contributions to dielectric, piezoelectric and mechanical properties of ferroic samples are a hot subject of both theoretical and experimental research. Recently,we have derived theoretical formulas…
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain…
Magnetoelectric coupling in insulating multiferroic materials is invaluable for both fundamental research and multifunctional device applications. However, material realization remains a significant challenge. We employ first-principles…
Ferroelectric polarization switching underpins the functional performance of a wide range of materials and devices, yet its dependence on complex local microstructural features renders systematic exploration by manual or grid-based…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper…
Domain structures play a crucial role in the electric, mechanical and other properties of ferroelectric materials. In this study, we uncover the physical origins of the enigmatic zigzag domain structure in the prototypical multiferroic…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. N\'eel-,…
Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with…
High-strain piezoelectric materials are often ceramics with a complicated constitution. In particular, PZT is used with compositions near to a so-called morphotropic phase boundary, where not only different variants of the same phase…