English
Related papers

Related papers: Electronic structure of two-dimensional crystals f…

200 papers

Heuslers are a prominent family of multi-functional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic…

Materials Science · Physics 2019-06-19 Abhishek Sharan , Zhigang Gui , Anderson Janotti

SrMnSb$_2$ is suggested to be a magnetic topological semimetal. It contains square, 2D Sb planes with non-symmorphic crystal symmetries that could protect band crossings, offering the possibility of a quasi-2D, robust Dirac semi-metal in…

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

Mesoscale and Nanoscale Physics · Physics 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

In the purpose of expanding the family of two-dimensional materials, we predict the existence of two-dimensional octa-structure of nitrogen group elements that are composed of squares and octagons in first-principle method based on density…

Materials Science · Physics 2015-12-08 Yu Zhang , Jason Lee , Wei-Liang Wang , Dao-Xin Yao

Successful isolation of graphene from graphite opened a new era for material science and con- densed matter physics. Due to this remarkable achievement, there has been an immense interest to synthesize new two dimensional materials and to…

Mesoscale and Nanoscale Physics · Physics 2016-08-11 Mehmet Yagmurcukardes , Cihan Bacaksiz , Fadıl Iyikanat , Engin Torun , R. Tugrul Senger , Francois M. Peeters , Hasan Sahin

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of…

When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic properties. Of particular interest is the situation when the…

Moir{\'e} heterostructures, created by stacking two-dimensional (2D) materials together with a finite lattice mismatch or rotational twist, represent a new frontier of designer quantum materials. Typically, however, this requires the…

The interface between two-dimensional (2D) crystals often forms a Moire superstructure that imposes a new periodicity, which is a key element in realizing complex electronic phases as evidenced in twisted bilayer graphene. A combined angle…

Materials Science · Physics 2024-07-30 Hayoon Im , Suji Im , Kyoo Kim , Ji-Eun Lee , Jinwoong Hwang , Sung-Kwan Mo , Choongyu Hwang

Atomically thin MoS2/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such…

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…

Materials Science · Physics 2015-05-18 Kin Fai Mak , Changgu Lee , James Hone , Jie Shan , Tony F. Heinz

Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…

Strongly Correlated Electrons · Physics 2019-10-15 V. T. Dolgopolov

The study of graphene, since its discovery around 2004, is possibly the largest and fastest growing field of research in material science, because of its exotic mechanical, thermal, electronic, optical and chemical properties. The studies…

Materials Science · Physics 2013-06-05 Gautam Mukhopadhyay , Harihar Behera

Molybdenum disulfide (MoS$_2$) is a promising candidate for 2D nanoelectronic devices, that shows a direct band-gap for monolayer structure. In this work we study the electronic structure of MoS$_2$ upon both compressive and tensile strains…

Materials Science · Physics 2016-05-03 Miquel López-Suárez , Igor Neri , Riccardo Rurali

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount…

Materials Science · Physics 2018-11-14 Roman Kempt , Agnieszka Kuc , Jae Hyo Han , Jinwoo Cheon , Thomas Heine

Lateral charge transport of a two-dimensional (2D) electronic system can be much influenced by feeding a current into another closely spaced 2D conductor, known as the Coulomb drag phenomenon -- a powerful probe of electron-electron…

Mesoscale and Nanoscale Physics · Physics 2025-03-04 Yingjia Liu , Kaining Yang , Kenji Watanabe , Takashi Taniguchi , Wencai Ren , Zheng Vitto Han , Siwen Zhao

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The…

The combination of two-dimensional (2D) materials into vertical heterostructures has emerged as a promising path to designer quantum materials with exotic properties. Here, we extend this concept from inorganic 2D materials to 2D…

Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group…

The electronic and optical properties of graphene monoxide, a new type of semiconductor materials, are first theoretically studied based on density functional theory. Electronic calculations show that the band gap is 0.952 eV which indicate…

Materials Science · Physics 2012-09-05 Gui Yang , Yufeng Zhang , Xunwang Yan