Related papers: Electron spin relaxation in paramagnetic Ga(Mn)As …
We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD has been performed using a charge sensing technique. The…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate…
The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is…
This study leads to the investigation of the non-equilibrium electron relaxation in the normal state of iron pnictides. Here we consider the relaxation of electrons due to their coupling with magnons and phonons in the metallic state of…
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that…
We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pumping…
We perform a theoretical investigation on the time evolution of spin pulses in an $n$-type GaAs (001) quantum well with and without external electric field at high temperatures by constructing and numerically solving the kinetic spin Bloch…
Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In…
Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this…
We investigate the spin relaxation of $p$-type GaAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations. We find that the quantum-wire size influences the spin relaxation time effectively by modulating…
Despite the recent interest in "organic spintronics", the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might…
We report the NQR study on the pressure-induced paramagnetic state in the antiferromagnetic (AF) intermetallic compound YMn$_2$ with the N\'eel temperature T_N=100 K at ambient pressure. From the $T$ variation of the nuclear spin-lattice…
We report the anomalous Dyakonov-Perel' spin relaxation in ultracold spin-orbit coupled $^{40}$K gas when the coupling between $|9/2,9/2\ >$ and $|9/2,7/2\ >$ states (atcing as the effective Zeeman magnetic field) is much stronger than the…
Based on fully microscopic kinetic spin Bloch equation approach, we show the non-Markovian effect in spin dephasing of heavy holes in $p$-type GaAs quantum wells. The non-Markovian effect manifests itself in spin dephasing when the mean…
The study of electron transport and scattering processes limiting electron mobility in high-quality semiconductor structures is central to solid-state electronics. Here, we uncover an unavoidable source of electron scattering which is…
Electron spin relaxation due to the D'yakonov-Perel' mechanism is investigated in bilayer graphene with only the lowest conduction band being relevant. The spin-orbit coupling is constructed from the symmetry group analysis with the…
We calculate electron and nuclear spin relaxation rates in a quantum dot due to the combined action of Nyquist noise and electron-nuclei hyperfine or spin-orbit interactions. The relaxation rate is linear in the resistance of the gate…
Similar to nitrogen-vacancy centers in diamond and impurity atoms in silicon, interstitial gallium deep paramagnetic centers in GaAsN have been proven to have useful characteristics for the development of spintronic devices. Among other…
The collective behavior of spins in a dilute magnetic semiconductor is determined by their mutual interactions and influenced by the underlying crystal structure. Hence, we begin with the atomic quantum-mechanical description of this system…