Related papers: Germanium Segregation in CVD Grown Sige Layers for…
Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor…
In situ electrochemical cells were assembled with an amorphous germanium (a-Ge) film as working electrode and sodium foil as reference and counter electrode. The stresses generated in a-Ge electrodes due to electrochemical reaction with…
Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111)…
We report the optoelectrical characterisation of Eshelby twisted Germanium sulfide (GeS) nanowires with first experimental observation of ferroelectric order at room temperature in GeS which is an otherwise centrosymmetric molecule. The…
${\gamma}$-GeSe is a new type of layered bulk material that was recently successfully synthesized. By means of density functional theory first-principles calculations, we systematically studied the physical properties of two-dimensional…
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of…
We have observed superconductivity in heavy p-doped Ge by measuring of differential resistance dV/dI(V) of Ge - PtIr point contacts. The superconducting (SC) features disappear above 6 K or above 1 T, what can be taken as the critical…
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy.…
The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an…
High-purity germanium crystals approximately 12 cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the crystals was determined to be in the range of 2000 - 4200 cm-2, which meets a…
Kinetic 3D lattice Monte Carlo studies are presented on Si nanocrystal (NC) formation by phase separation in 1 keV Si implanted thin SiO2 films. The simulation start from Si depth profiles calculated using the dynamic, high-fluence binary…
Plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide (SiO$_2$) is widely used for low-temperature fabrication of dielectric thin films, yet its atomic-scale growth mechanisms remain incompletely understood. In this work, we…
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when…
Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, promise new physical properties such as quantum spin Hall effect. While there have been many claims of growth of germanene, the lack of precise structural…
Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in…
Heteroepitaxial Ge0.98Mn0.02 quantum dots on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We…
An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of…
The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron…