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Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising…
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly…
We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…
Field-Effect Transistors with graphene channels or GFETs are an interesting alternative for the detection of analytes in biological fluids since the electrical behavior of the channel changes when exposed to a sample (among other detection…
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied…
The effect of grain boundary (GB) structure, size and shape on thermal conductivity of polycrystalline graphene is studied in the framework of the deformation potential approach. Precise analytical expressions for the phonon mean free path…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
The MOS devices are the basic building block of any digital and analog circuits, where silicon (Si) is the most commonly used material. The International Technology Roadmap Semiconductor (ITRS) report predicts the gate length of the MOS…
Supercapacitors store energy via the formation of an electric double layer, which generates a strong electric field at the electrode-electrolyte interface. Unlike conventional metallic electrodes, graphene-derived materials suffer from a…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…
In this article, we investigate the temperature and chemical potential dependence of the optical conductivity of graphene, within a field theoretical representation in the continuum approximation, arising from an underlying tight-binding…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT…
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom tick. However, the gapless dispersion relation of graphene…
We report on the first measurement of the thermal conductivity of a suspended single layer graphene. The measurements were performed using a non-contact optical technique. The near room-temperature values of the thermal conductivity in the…
Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and…
Motivated by the experimental measurement of electrical and hall conductivity, thermopower and Nernst effect, we calculate the longitudinal and transverse electrical and heat transport in graphene in the presence of unitary scatterers as…
Using a generalized Landauer approach we study the non-linear transport in mesoscopic graphene with zig-zag and armchair edges. We find that for clean systems, the low-bias low-temperature conductance, G, of an armchair edge system in…
Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectric film using Wentzel-Kramers-Brillouin approximation. Both…