Related papers: Bit storage by $360^\circ$ domain walls in ferroma…
The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore's Law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of…
A closed form analytical expression for the magnetization vector distribution within the cross-tie domain wall in an isotropic ferromagnetic thin film is given. The expression minimizes the exchange energy functional exactly, and the…
The current mediated domain-wall dynamics in a thin ferromagnetic wire is investigated. We derive the effective equations of motion of the domain wall. They are used to study the possibility to optimize the power supplied by electric…
We demonstrate a novel approach to control and stabilize magnetic skyrmions in ultrathin multilayer nanostructures through spatially engineered magnetostatic fields generated by ferromagnetic nanorings. Using analytical modeling and…
Controlling the vortex chirality in ferromagnetic nanodots and nanorings has been a topic of investigation for the last few years. Many control methods have been proposed and it has been found that the control is related to the breaking of…
Thin nanomagnetic rings have generated interest for fundamental studies of magnetization reversal and also for their potential in various applications, particularly as magnetic memories. They are a rare example of a geometry in which an…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
Nanoscale magnetic junction provides a useful approach to act as the building block for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
Miniaturization is an essential element in the development of information processing technologies and is also one of the main determinants of the usability of the tested artificial neural networks. It is also a key element and one of the…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
Nanomagnets form the building blocks for a gamut of miniaturized energy-efficient devices including data storage, memory, wave-based computing, sensors and biomedical devices. They also offer a span of exotic phenomena and stern challenges.…
Strongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
Recent advances in high-density magnetic storage and spin electronics are based on the use of magnetic materials along with conventional microelectronic materials (metals, insulators and semiconductors). The unit information (bit) is stored…
The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…
Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show…
Of the new types of cryoelectronic devices under development, including phase shifters, giant magnetoresistance switches, diodes, transistors, and memory cells, some are based on hybrid superconductor-normal metal or…
Neuromorphic computing aims to revolutionize large-scale data processing by developing efficient methods and devices inspired by neural networks. Among these, the control of magnetism through ion migration has emerged as a promising…
An ultra fast bit addressing scheme for magnetic random access memories (MRAM) in a crossed wire geometry is proposed. In the addressing scheme a word of cells is programmed simultaneously by sub nanosecond field pulses making use of the…