Related papers: Etching-dependent reproducible memory switching in…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
We investigate bistability and memory effects in a molecular junction weakly coupled to metallic leads with the latter being subject to an adiabatic periodic change of the bias voltage. The system is described by a simple Anderson-Holstein…
The rising demand for high-performing batteries requires new technological concepts. To facilitate fast charge and discharge, hierarchically structured electrodes offer short diffusion paths in the active material. However, there are still…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with a hysteresis in…
Adaptive response to a varying environment is a common feature of biological organisms. Reproducing such features in electronic systems and circuits is of great importance for a variety of applications. Here, we consider memory models…
We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
We studied metallic Ag formation inside and on the surface of Ag2S thin films, induced by the electric field created with a STM tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full…
A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for…
Two-dimensional superconductors offer an excellent platform for the study of vortex matter due to their low superfluid stiffness and inability to effectively screen applied magnetic fields. Here we explore vortices in a two-dimensional…
Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…
We present a solid state system which spontaneously generates remarkable engraving patterns on the surface of Ge. The layered construction, with a metal film on the Ge surface, results in coupling of the metal catalyzed etching reaction…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
We present a physics-based model that accurately predicts the performance of Medtronic's implantable medical device battery lithium/carbon monofluoride (CF$_x$) - silver vanadium oxide (SVO) under both low-rate background monitoring and…
We report that the surface conductivity of Na$_{2}$IrO$_3$ crystal is extremely tunable by high energy Ar plasma etching and can be tuned from insulating to metallic with increasing etching time. Temperature dependent electrical transport…