Related papers: Spin-injection Hall effect in a planar photovoltai…
Anomalous Hall effect (AHE) is a fundamental spin-dependent transport property that is widely used in spintronics. It is generally expected that currents carrying net spin polarization are required to drive the AHE. Here we demonstrate…
We study the time evolution of the Optical Spin Hall Effect (OSHE), which occurs when exciton-polaritons undergo resonant Rayleigh scattering. The resulting spin pattern in momentum space is quantified by calculating the degree of circular…
We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…
Charge-spin interconversion in magnetic materials is investigated by using first-principles calculations. In addition to the conventional spin Hall effect (SHE) that requires mutual orthogonality of the charge current, spin-flow direction,…
We discuss methods for imaging the nonequilibrium spin polarization of electrons in Fe/GaAs spin transport devices. Both optically- and electrically-injected spin distributions are studied by scanning magneto-optical Kerr rotation…
We report electrical detection of the dynamical part of the spin pumping current emitted during ferromagnetic resonance (FMR) using the inverse Spin Hall Effect (ISHE). The experiment is performed on a YIG$|$Pt bilayer. The choice of YIG, a…
Silicene has introduced itself as an outstanding novel material, which seeks its meritorious place among common spintronic devices like Cu and Ag. In this work, photogalvanic effect in silicene is studied within the semi-classical approach…
We derive expressions for the efficiency and figure of merit of two spin caloritronic devices based on the spin Seebeck effect (SSE), i.e., the generation of spin currents by a temperature gradient. The inverse spin Hall effect is…
The Photon Drag Effect (PDE) is a nonlinear process akin to optical rectification in which the momentum of light is transferred to charged carriers and converted to a DC voltage. Here, we experimentally demonstrate the spin-polarized…
Absorption of circularly polarized light in semiconductors is known to result in optical orientation of electron and hole spins. It has been shown here that in semiconductor quantum well structures spin orientation of carriers can be…
Model calculation and experimental data of circularly-polarized-light-dependent photocurrent in a n-AlGaAs/p-InGaAs/p-GaAs heterostructure are reported. It is found that, under the appropriate forward bias condition, spin voltaic effect…
Spintronics, which aims at exploiting the spin degree of freedom of carriers inside electronic devices, has a huge potential for quantum computation and dissipationless interconnects. Ideally, spin currents in spintronic devices should be…
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins of electrons as information carriers, allowing generation of spin currents and detecting them via the electric voltage. In the standard…
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We study the spin photogalvanic effect in two-dimensional electron system with structure inversion asymmetry by means of the solution of semiconductor optical Bloch equations. It is shown that a linearly polarized light may inject a pure…
Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and…
We show theoretically that both intrinsic spin Hall effect (SHE) and orbital Hall effect (OHE) can arise in centrosymmetric systems through momentum-space orbital texture, which is ubiquitous even in centrosymmetric systems unlike spin…
The intrinsic spin Hall effect in semiconductors has developed to a remarkably lively and rapidly growing branch of research in the field of semiconductor spintronics. In this article we give a pedagogical overview on both theoretical and…
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field.…