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Interest in the superconducting proximity effect has recently been reignited by theoretical predictions that it could be used to achieve topological superconductivity. Low-T$_{c}$ superconductors have predominantly been used in this effort,…
Nowdays, multiferroic materials with magnetoelectric coupling have many real-world applications in the fields of novel memory devices. It is challenging is to create multiferroic materials with strongly coupled ferroelectric and…
A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \{beta}-Ga2O3 for…
Homoepitaxy of W(110) and Mo(110) is performed in a kinetically-limited regime to yield a nanotemplate in the form of a uniaxial array of hills and grooves aligned along the [001] direction. The topography and organization of the grooves…
We have studied the growth of Fe3O4 (111) epitaxial films on Al2O3 (001) substrates using a pulsed laser deposition / thermal reduction cycle using an {\alpha}-Fe2O3 target. While direct deposition onto the Al2O3 (001) substrates results in…
It is challenging to grow an epitaxial four-fold compound superconductor (SC) on six-fold topological insulator (TI) platform due to stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI…
Lateral in-plane heterostructures enable precise control of electronic properties and quantum effects in 2D materials. However, their periodic synthesis is challenging because it requires precise control to maintain sharp, coherent…
Here we report a method to fabricate high quality Bi2Se3 thin films using molecular beam epitaxy with a radio frequency cracker cell as an atomic selenium source. With rates close to exact stoichiometry, optimal layer-by-layer growth of…
Transition metal oxides are a platform for exploring strain-engineered intriguing physical properties and developing spintronic or flexible electronic functionalities owing to strong coupling of spin, charge and lattice degrees of freedom.…
A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry…
A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin…
We have performed angle-resolved photoemission spectroscopy on a heterostructure consisting of topological insulator Bi2Te3 and iron chalcogenide FeTe fabricated on SrTiO3 substrate by molecular-beam-epitaxy technique. This system was…
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, and up to 4000…
The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully…
We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a…
High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3…
We report the epitaxial growth of BiFeO3 by pulsed electron deposition and the resulting crystal quality, magnetic and nanoscale switching properties. X-ray diffraction shows high quality single phase, epitaxial (001) oriented films grown…
It is well known that superconductivity in Fe-based materials is favoured under tetragonal symmetry, whereas competing orders such as spin-density-wave (SDW) and nematic orders emerge or are reinforced upon breaking the fourfold (C4)…
Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…
Bulk NiFe2O4 is an insulating ferrimagnet. Here, we report on the epitaxial growth of spinel NiFe2O4 ultrathin films onto SrTiO3 single-crystals. We will show that - under appropriate growth conditions - epitaxial stabilization leads to the…