Related papers: Non-equilibrium magnetism in dual spin valves
Dynamical perturbations can modify the energy landscape of a physical system, such that unstable equilibrium configurations become stable when subject to an external drive. The magnetic analog of such dynamical stabilization corresponds to…
As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics.…
Antiferromagnetic (AFM) spintronics offers a pathway toward electrically controllable spin-based devices beyond ferromagnets. Here, we identify wurtzite MnX (X = S, Se, Te) as a family of multiferroic materials hosting competing AFM phases,…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
Here, by applying a comprehensive approach including magnetic, transport measurements, ARPES band structure measurements, DFT calculations, and analytical theory consideration, we unveil the puzzling origin of the negative isotropic…
We report on an {\em ab-initio} study of giant magnetoresistance (GMR) and current-induced-torques (CITs) in Cr/Au multilayers that is based on non-equilibrium Green's functions and spin density functional theory. We find substantial GMR…
The tunnel current and magnetoresistance (TMR) are investigated in magnetic tunnel junctions consisting of a spin-filter tunnel barrier, sandwiched between a ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode. The investigations…
The propagation of magnons along a symmetry path may depend on the direction of propagation, similar to many other quasiparticles in nature. This phenomenon is commonly referred to as nonreciprocity. In addition to the fact that it is of…
Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…
Magnetic molecules possess a high potential as building blocks for the design of spintronic devices. Moreover, the use of molecular materials opens the way for the controlled use of bottom-up, e.g. supramolecular, processing techniques…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Control of magnetization dynamics is one of the primary goals in spintronics. It has been demonstrated using spin Hall effect i.e charge current to spin current conversion in non-magnetic metal which has large spin-orbit coupling such as…
The recent discovery of altermagnets, which exhibit spin splitting without net magnetization, opens new directions for spintronics beyond the limits of ferromagnets, antiferromagnets, and spin orbit coupled systems. We investigate spin…
Magnetization of a spin1/2 set is determined by means of their individual wave function. The theoretical treatment based on the fundamental axioms of quantum mechanics and solving explicitly Schr\"odinger equation gives the evolution of…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
Magnetic inertial dynamics has recently been predicted and experimentally demonstrated in two-sublattice ferromagnets such as CoFeB and NiFe permalloy. In this work, we investigate the spin-wave spectrum of such systems by incorporating the…
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…
The ordinary magnetoresistance (MR) of doped semiconductors is positive and quadratic in a low magnetic field, B, as it should be in the framework of the Boltzmann kinetic theory or in the conventional hopping regime. We observe an unusual…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…