Related papers: Non-equilibrium magnetism in dual spin valves
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
The linear Edelstein effect is a cornerstone phenomenon in spintronics that describes the generation of spin magnetization in response to an applied electric field. Recent theoretical advances have reignited interest in its nonlinear…
We study the role of diamagnetic effects on the transport properties of metallic magnetic multilayers to elucidate whether they can explain the Giant Magnetoresistance (GMR) effect observed in those systems. Realistic Fermi surface…
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating…
Superconducting spintronics has emerged in the last decade as a promising new field that seeks to open a new dimension for nanoelectronics by utilizing the internal spin structure of the superconducting Cooper pair as a new degree of…
We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect…
Altermagnets have attracted considerable attention in recent years owing to their potential technological applications in spintronics and magnonics. Recently, a new class of spontaneous altermagnets has been theoretically predicted in a…
The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
The use of single molecules to design electronic devices is an extremely challenging and fundamentally different approach to further downsizing electronic circuits. Two-terminal molecular devices such as diodes were first predicted [1] and,…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
We use the first principles and effective Hamiltonian methods to study the electronic structure and magnetic properties of a recently synthesized layered antiferromagnetic square net topological semimetal EuZnSb$_2$ [1]. The main message of…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has…