Related papers: External noise effects on the electron velocity fl…
The interrelationship between a material's structure and its properties lies at the heart of materials-related research. Finding how the changes of one affect the other is of primary importance in theoretical and computational materials…
The shot noise of spin polarized electrons is shown to be generically dependent upon spin-flip processes. Such a situation represents perhaps the simplest instance where the two-particle character of current fluctuations out of equilibrium…
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including…
We propose an effective field theory describing the time dependent fluctuations of electrons in conducting systems, generalizing the well known kinetic theory of fluctuations. On several examples, we show its equivalence, (when quantum…
A short summary of the drift-diffusion-Langevin formalism for calculating finite-frequency shot noise in diffusive conductors is presented. Two new results are included in this presentation. First, we arrive at a simple (but accurate)…
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…
The problems of high linear conductivity in an electric field, as well as nonlinear conductivity, are considered for plasma-like systems. First, we recall several observations of nonlinear fast charge transport in dusty plasma, molecular…
We study theoretically spin decoherence and intrinsic spin noise in semiconductor quantum wires caused by an interplay of electron hopping between the localized states and the hyperfine interaction of electron and nuclear spins. At a…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
Many physical phenomena involving mobile agents involve time-varying scalar fields, e.g., quadrotors that emit noise. As a consequence, agents can influence and can be influenced by various environmental factors such as noise. This paper…
Interband and intraband transitions are fundamental concepts in the study of electronic properties of materials, particularly semiconductors and nanomaterials. These transitions involve the movement of electrons between distinct energy…
We consider an electron magnetically interacting with a spin-1/2 impurity, embedded in an external environment whose noisy term acts only on the impurity's spin, and we find expressions for the electron transmission and reflection…
Using a TE/TM decomposition for an angular plane-wave spectrum of free random electromagnetic waves and matched boundary conditions, we derive the probability density function for the energy density of the vector electric field in the…
A relation derived from the Kubo formula shows that optical conductivity measurements below the gap frequency in doped semiconductors can be used to probe directly the time-dependent quantum dynamics of charge carriers. This allows to…
We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit.…
Electron transport in the transistor structure based on thin undoped GaAs-in-Al2O3 quantum wire is simulated by ensemble Monte-Carlo method taking into account electron scattering by the phonons and surface roughness. The influence of…
We have studied a one-dimensional channel with a wider, straight region irradiated by an external electromagnetic field. In this system the interplay between interference effects and resonance phenomena manifests itself and provides a new…
We analyze the effect of increasing charge density on the Fixed Node Errors in Diffusion Monte Carlo by comparing FN-DMC calculations of the total ground state energy on a 4 electron system done with a Hartree-Fock based trial wave function…
Exact solution of the linearized equations for steady-state transport in semiconductors yields two modes that vary exponentially in space, one involving screening (without entropy production) and one involving diffusion and recombination…
The fundamental aspects of spin-dependent transport processes and their interplay with temperature gradients, as given by the spin Seebeck coefficient, are still largely unexplored and a multitude of contributing factors must be considered.…