Related papers: Photoconductive gain in semiconductor quantum wire…
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical…
The bases of the theory of light reflection and absorption by low-dimensional semiconductor objects (quantum wells, wires and dots) at both monochromatic and pulse irradiations and at any form of light pulses are developed. The…
Entanglement-based quantum key distribution promises enhanced robustness against eavesdropping and compatibility with future quantum networks. Among other sources, semiconductor quantum dots can generate polarization-entangled photon pairs…
A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted…
Electromagnetic signals are always composed of photons, though in the circuit domain those signals are carried as voltages and currents on wires, and the discreteness of the photon's energy is usually not evident. However, by coupling a…
We consider a two-dimensional electron gas interacting with a quantized cavity mode. We find that the coupling between the electrons and the photons in the cavity enhances the superconducting gap. Crucially, all terms in the Peierls phase…
In this paper the photon-assisted electron motion in a multiquantum well (MQW) semiconductor heterostructure in the presence of an electric field is investigated. The time-dependent Schrodinger equation is solved by using the split-operator…
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are…
We study the exciton gas-liquid transition in GaAs/AlGaAs coupled quantum wells. Below a critical temperature, Tc=4.8K, and above a threshold laser power density the system undergoes a phase transition into a liquid state. We determine the…
Theoretical and numerical calculations of the optical absorption spectra of excitons interacting with longitudinal-optical phonons in quasi-2D polar semiconductors are presented. In II-VI semiconductor quantum wells, exciton binding energy…
Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in…
The prospect of using light to probe or manipulate quantum materials has become an active area of interest. Here, we investigate a quantum wire -- treated as a finite-sized one-dimensional electron gas -- that is coupled to a single…
Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a…
We consider a line-shape of magnetoexciton photoluminescence from quantum wells when the disorder is sufficiently small. In this case the phonon-assisted optical transitions become important for the line formation. We study both inter-band…
We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and…
We perform the quantum yields in a multi-band quantum dot (QD) photocell via doping an intermediate band (IB) between the conduction band (CB) and valence band (VB). Under two different sub-band gap layouts, the output power has a prominent…
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The…
Quasi-ballistic semiconductor quantum wires are exposed to localized perpendicular magnetic fields, also known as magnetic barriers. Pronounced, reproducible conductance fluctuations as a function of the magnetic barrier amplitude are…
The GaAs/AlGaAs quantum well solar cell (QWSC) shows promise as a novel approach to higher efficiency solar cells but suffers from a poor short circuit current Jsc. We report on efforts to reduce this problem with the use of compositional…
The AlGaN/GaN quantum-well heterostructures typically exhibit a positive photoconductivity (PPC) during the light illumination. Surprisingly, we found that introducing the GaN/AlN superlattice (SL) back barrier into N-polar AlGaN/GaN…