Related papers: Mottness on a triangular lattice
The Hubbard model and its strong-coupling version, the Heisenberg one, have been widely studied on the triangular lattice to capture the essential low-temperature properties of different materials. One example is given by transition metal…
We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more…
We study correlation effects in a three-band extended Hubbard model of Cu -- O planes within the 1/N mean field approach, in the infinite U limit. We investigate the emerging phase diagram and discuss the low energy scales associated with…
In this work we study the two-orbital Hubbard model on a square lattice in the presence of hybridization between nearest-neighbor orbitals and a crystal-field splitting. We use a highly reliable numerical technique based on the density…
The Hubbard model on a semi-infinite three-dimensional lattice is considered to investigate electron-correlation effects at single-crystal surfaces. The standard second-order perturbation theory in the interaction U is used to calculate the…
Motivated by recent advances in fabricating artificial lattices in semiconductors and their promise for quantum simulation of topological materials, we study the one-dimensional dimerized Fermi-Hubbard model. We show how the topological…
The role of the multiorbital effects on the emergence of frustrated electronic orders on the triangular lattice at half filling is investigated through an extended spinless fermion Hubbard model. By using two complementary approaches,…
Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…
While the interplay of correlations and geometric frustration in doped Mott insulators provides a fertile ground for exotic quantum phases, the nature of the metallic state emerging upon particle doping remains poorly understood. In this…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
A new decoupling scheme is developed for the Hubbard model which provides a unified description of the spin-symmetric (paramagnetic metallic and insulating) phases as well as the broken-symmetry AFI phase. Independent of magnetic ordering,…
We investigate the quantum phase transitions in the half-filled Hubbard model on the triangular lattice by means of the path-integral renormalization group (PIRG) method with a new iteration scheme proposed recently. It is found that as the…
We describe a low-temperature approach to the two-dimensional half-filled Hubbard model which allows us to study both antiferromagnetism and single-particle properties. This approach ignores amplitude fluctuations of the antiferromagnetic…
We study the behavior of the density of states and the $B_{1g}$ nematic susceptibility extracted from Raman response data across the doping-driven Lifshitz transition comparing the weak and strong interaction cases. Our results were…
With the discovery of strong coupling physics and superconductivity in Moir\'e superlattices, it's essential to have an understanding of strong coupling driven superconductivity in systems with trigonal symmetry. The simplest lattice model…
Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…
Insulator-metal transition is investigated self-consistently on the frustrated Shastry-Sutherland lattice in the framework of Slave-Boson mean-field theory. Due to the presence of quasi-flat band structure characteristic, the system…
The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…
Metal-insulator transitions in the paramagnetic phase of the two dimensional square lattice Hubbard model are studied using the dynamical cluster approximation with eight momentum cells. We show that both the interaction-driven and the…
We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…